Event
  • 12-09-2017

    Shanghai Industrial uTechnology Research Institute

    From Feb 22 to 23, the "Sino-Germany Virtual Joint Research Institute of Functional Materials and Electronics" co-constructed by Shanghai Institute of Microsystem and Information Technology and Forschungszentrum Jülich GmbH held 2017 Annual Council in Shanghai, to systematically discuss the cooperation work progress over the past year since the establishment of the Joint Research Institute and promote the in-depth cooperation in the future. Prof. Sebastian Schmidt, Director of Forschungszentrum Jülich GmbH, Prof. Andreas Offenhaüsser, Director of Peter-Grunberg Institute 8 (PGI-8) of Forschungszentrum Jülich GmbH, Researcher Yu Yuehui, Deputy Party Secretary and Researcher Xie Xiaoming, Deputy Director of Shanghai Institute of Micros...[ Learn more ]

  • 31-08-2017

    Ma Kai, Member of the Political Bureau of the CPC Central Committee and Vice Premier of the State Council and his Par...

    On the morning of May 5, Ma Kai, Member of the Political Bureau of the CPC Central Committee and Vice Premier of the State Council, Ding Xuedong, Deputy Secretary of the State Council, Miao Wei, Minister of Industry and Information Technology, Liu Wei, Vice Minister of Finance, Zhou Bo, Member of Standing Committee of Shanghai Municipal Committee and Executive Vice Mayor and other leaders visited Zing Semiconductor Corporation, Shanghai. [ Learn more ]

  • 31-08-2017

    SIMIT, Chinese Academy of Sciences Made Important Progress in the Research on the Broad-spectrum Photoluminescence fr...

    Recently, the SOI materials and devices research group of the State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, made important progress in the research on the broad-spectrum photoluminescence from silicon nanowire arrays. The research team studied the luminescence properties of the silicon nanowire arrays by combining SOI with surface plasmons technology, and cooperated with Fudan University to calculate the corresponding relationship of the photoluminescence peak position of silicon nanowire and nanocavity resonant mode based on the finite difference time domain (FDTD) theory, which laid an experimental and theoretical foundati...[ Learn more ]

  • 31-08-2017

    Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences successful prepared graphen...

    Shanghai Institute of Microsystem and Information Technology made important progress in the controlled preparation study of graphene nanoribbons. Researcher Wang Haimin’s team of State Key Laboratory of Functional Materials for Informatics achieved controlled growth of graphene nanoribbons in hexagonal boron nitride trenches for the first time internationally, successfully opened the graphene bandgap, and verified its excellent electrical properties at room temperature, which provided a possible technical path for the development of graphene digital circuit.[ Learn more ]

  • 31-08-2017

    SIMIT Made Important Progress in Germanium-assisted Growth of Graphene Material on Insulators

    Recently, the SOI (Silicon on insulator) Materials and Devices Research Group of the State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, made important progress in the research on the preparation of graphene directly on the insulating substrates. The preparation of graphene on insulator is an important basic condition to promote the application of graphene in the field of microelectronics.[ Learn more ]