Since the founding of new China, Shanghai Institute of Microsystem and Information Technology (SIMIT) has won 46 national science and technology awards and 347 provincial and ministerial awards. Among them, "Type A separation membrane" technology won the National Science and Technology Progress Special Award, "High-speed, ultra-high-speed two-stage digital integrated circuit" and "High-end silicon-based SOI material research, development and industrialization" won the National Science and Technology Progress Award First Prize.
In the 1950s, Shanghai Institute of Microsystem and Information Technology took the lead in the successful development of spheroidal graphite cast iron domestically, which successfully solved the high fluorine-containing iron ore smelting and rare earth element recovery problems in Baotou. After the 1960s, Shanghai Institute of Microsystem and Information Technology took the lead in establishing the ultra-pure metal and III-V group elements compound semiconductor materials research base and developing the microelectronics and integrated circuit manufacturing technology domestically. It cooperated with the industrial sector to develop the first domestic industrial practical PN junction Isolation integrated circuit, ECL high-speed circuit, the first domestic 8-bit and 16-bit microprocessors and other microelectronic devices, with considerable progress in some exploratory, original projects as well, laying a solid foundation for the development in the future.
In June 1998, the leading group of science and education under the State Council approved the Chinese Academy of Sciences to start the pilot knowledge innovation project. And Shanghai Institute of Microsystem and Information Technology was included in the first startup units as one of the five high-tech research and development bases in Shanghai. According to the development orientation, the research institute adjusted the research direction from the former focus on material subject to the information and communication field, and determined the development strategy of "System driving device, device driving material". After entering Phase II of knowledge innovation, Shanghai Institute of Microsystem and Information Technology further adjusted the subject field to two focuses of "Electronic science and technology, information and communication engineering" according to the development policy of the Chinese Academy of Sciences in the new era and the actual situation of the Institute, and concentrated the discipline direction to wireless information systems and networks, micro-system technology, information functional materials and devices, micro and new energy, etc.
During the ten years of the knowledge innovation project, SIMIT successfully launched Chuangxin Satellite-1, 2 and 3, "Shenzhou-VII" companion, and is the important development base of micro satellite in China. We implemented Shanghai World Expo Intrusion Prevention Sensor Network, Pudong Airport Intrusion Prevention System, Taihu Lake Water Quality Monitoring Sensor Network, South-to-North Water Diversion Middle Route Security System and other Internet of Things application demonstration projects, leading the Internet of things core technology, and promoting the national strategic emerging industries. We developed broadband wireless communication system with independent intellectual property rights, which was applied in Wenchuan and Yushu earthquake relief, Shanghai World Expo and other major events, playing an irreplaceable role in the earthquake relief work, maintenance of stability, public security, digital city and other aspects. We achieved industrialization of SOI materials, which has filled the gaps at home and been applied to the major state construction projects. Shanghai Simgui Technology Co., Ltd., the holding company, is the only national high-end silicon-based material industry base in the country with the international advanced level.
During the "12th Five-Year Plan" period, as the first technical unit with the system level model task of the Chinese Academy of Sciences, SIMIT made breakthroughs in the multi-functional composite sensor and other key technologies, established the special broadband wireless sensor network system solutions, and realized large-scale application in the related units in our country and the technological leapfrogging of the communication system from narrowband to broadband. The successful development of the first domestic SOI-based 0.13um process large-scale high-reliability dedicated integrated circuit ASIC chip was applied in Beidou navigation satellite and other key national projects, laying a solid foundation for the autonomous control of aerospace core components in China. With the support of superconducting single-photon detector SNSPD, Academician Pan Jianwei of University of Science and Technology of China implemented the 200 km measurement device independent quantum key distribution against hacker attacks for the first time internationally, and the achievements were selected in the Top Ten Scientific and Technological Progress in 2014 elected by the academicians of the Chinese Academy of Sciences and the Chinese Academy of Engineering. Ultra-high g acceleration sensor became an irreplaceable product for the strategic equipment of our country, breaking the international embargo. And the MEMS technology industrialization platform - Shanghai Industrial μTechnology Research Institute we launched and established was listed as the "Four-beam and eight-column" in the construction of science technology innovation center with the greatest global influence in Shanghai.