• 15-01-2018

    Significant achievement on thermoelectric materials research made by SIMIT

    Recently, one research group from CAS Center for Excellence in Superconducting Electronics of SIMIT, leaded by Prof. Dawei Shen, successfully achieved the high-resolution low-lying electronic structure of SnSe, a thermoelectric material currently maintaining the highest thermoelectric figure of merit[ Learn more ]

  • 15-01-2018

    SIMIT has made important progress in ultra-low field magnetic resonance imaging

    The group of superconductivity at Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences suggested a method to suppress the power-line interference in ultra-low field nuclear magnetic resonance and magnetic resonance imaging (ULF NMR/MRI) in the cooperation with Prof. Hans-Joachim Krause’s group at Forschungszentrum Jülich of Germany. [ Learn more ]

  • 05-12-2017

    Practical Superconducting Nanowire Single-Photon Detector Sets Efficiency Record

    Researchers have demonstrated the fabrication and operation of a superconducting nanowire single-photon detector (SNSPD) with detection efficiency that they believe is the highest on record. The photodetector is made of polycrystalline NbN with system detection efficiency of 90.2 percent for 1550-nm-wavelength photons at 2.1 K. In experiments, the system detection efficiency saturated at 92.1 percent when the temperature was lowered to 1.8 K. The research team believes that [ Learn more ]

  • 05-12-2017

    Research breakthrough in bionic liquid-transport surface - Topological Liquid Diode

    Directed and spontaneous transport of a liquid on a solid surface is highly desired in various settings that range from microfluidics, printing, and oil-water separation to water harvesting technologies. Despite com- mendable progresses, it remains a daunting undertaking to mimic the structural and the functional sophistication inherent in living organisms in a facile and reproducible manner. Recently, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, in collaboration with City University of Hong Kong (CityU)[ Learn more ]

  • 23-11-2017

    Science publishes research of novel high speed and low power Sc-Sb-Te phase change storage material of SIMIT

    Non-volatile phase-change random-access memory (PCRAM) is regarded as a leading candidate for next-generation electronic memory hierarchy. It utilizes the pronounced electrical resistance difference between the amorphous and crystalline states of chalcogenide phase change materials (PCMs) to encode digital information. Fast and reversible phase transitions between the two states at elevated temperatures and good thermal [ Learn more ]