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Graphene: Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Hea...
Zengfeng Di and co-workers publish a peer-reviewed original article in small as cover article . In this article, they demonstrate a method to produce graphene with the desired pattern on arbitrary dielectric substrates by a semiconducting, germanium-assisted, chemical vapor deposition approach. [ Learn more ]
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Graphene: Synthesis of Layer-Tunable Graphene: A Combined Kinetic Implantation and Thermal Ejecti...
Zengfeng Di and colleagues take advantage of the dual metal substrate of Ni-coated Cu foils to precisely control of layer number of graphene by ion implantation. They find that the layer number of graphene strictly corresponds to the implantation fluence as expected. This peer-reviewed original a...[ Learn more ]
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Fluorinated Graphene: Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics
The unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics for more than 60 years. Zengfeng Di and co-workers integrate fluorinated graphene as an effective diffusion barrier layer to suppress the formation of...[ Learn more ]
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Edge control of graphene domains grown on hexagonal boron nitride
The edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying ...[ Learn more ]