Zengfeng Di and co-workers publish a peer-reviewed original article in small as cover article . In this article, they demonstrate a combined and controlled approach called edge-cutting transfer to precisely generate spatially aligned Si/Ge nanoribbons with a designed geometry. [ Learn more ]
Zengfeng Di and co-workers publish a peer-reviewed original article in small as cover article . In this article, they demonstrate a method to produce graphene with the desired pattern on arbitrary dielectric substrates by a semiconducting, germanium-assisted, chemical vapor deposition approach. [ Learn more ]
Zengfeng Di and colleagues take advantage of the dual metal substrate of Ni-coated Cu foils to precisely control of layer number of graphene by ion implantation. They find that the layer number of graphene strictly corresponds to the implantation fluence as expected. This peer-reviewed original a...[ Learn more ]
The unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics for more than 60 years. Zengfeng Di and co-workers integrate fluorinated graphene as an effective diffusion barrier layer to suppress the formation of...[ Learn more ]