RESEARCH

High-end silicon-based materials and applications - Reinforcing SOI wafer production, achieving breakthrough in large silicon wafer

Date:23-08-2017   |   【Print】 【close

  Jointly set up the high reliability device collaborative innovation design center with Microsat Innovation Research Institute. With the aerospace application as the driving force, create the domestic first-class KFZ R & D center to achieve the synergetic development of KFZ SOI materials, processes, devices, chips and system applications, realize China's aviation Aerospace core components autonomous control, with the initial establishment of high reliability SOI "One-stop" design and manufacturing platform with the integration of the military and civilian. Adopt the international first o bonding reinforcement technology, successfully develop 8-inch independent high-reliability bonding enhanced SOI wafer with superior KFZ performance and achieve small batch production. The performance is equivalent to the product index of the world-class SOI wafer manufacturer - Soitec, France, providing a new way and solid material guarantee for the research and development of KFZ SOI circuit in China and its application in the field of aerospace and defense. Following the successful independent development of the "New micro-core" communications security chip, plan and launch a variety of KFZ SOI dedicated IP and chips development. Plan to carry a new batch of Beidou navigation satellites in 2017, and further expand the application of KFZ SOI chip.

  SOI basic research was steadily promoted. To respond to the development trend of microelectronics technology, 4-inch monocrystalline ferrite wafer compatible with microelectronics technology was successfully developed, elucidating the physical mechanism of graphene crystal domain orientation growth step manipulation, laying an important foundation for the technology innovation from traditional three-dimensional SOI wafer to two-dimensional SOI Wafer. Reveal the physical phenomenon that Moiré fringes at the heterogeneous interface of the two-dimensional material/semiconductor substrate has strong charge transfer, and discover the nano-pinning effect caused by charge transfer, which provided a solution for the manipulation of the physical properties of two- dimensional materials. Punish a number of high-level papers in the Nature Communications and other internationally renowned journals. 

  Silicon photonic chip layout is ready to go. Dedicated to the large-scale integrated optical chip technology, optimize the core components, develop multi-channel integrated chip, and explore the silicon cylinder on-chip light manipulation study, with a number of high-level papers published. Successfully apply for the Chinese Academy of Sciences Pilot Project (Class B), under the "Large-scale integrated chip" special "Interactive function" project, applying for the Science and Technology Commission 02 Special Project and Shanghai Major Projects. Introduce Dr. Yu Mingbin, silicon photonics process leader of Institute of Microelectronics, Singapore, included the Chinese Academy of Sciences Pioneer Hundred (Class A) Plan, which has laid a solid talent foundation for the silicon photon technology and research in our country. The silicon photonic technology platform with global influence took shape, which will break through the bottlenecks in China's silicon photon industry and research. 

  After the construction for one year, Zing Semiconductor Corporation initiated and established by our institute smooth implemented product commissioning, successfully making 12-inch ingot, and producing high-quality 12-inch monocrystalline silicon wafer. The results will completely break the situation that large-size silicon materials in China completely depends on import, and form a complete semiconductor industry chain, laying a foundation for the development of China's deep submicron giant large scale integrated circuit industry, driving the whole industry to enhance the overall product level, and creating the national wafer brand. 

  Host the "SOI Summit Forum and International RF-SOI Seminar" for the fourth time in a row, with continual improvement of international influence. Around the FD-SOI international mainstream, actively promote China’s FD-SOI industry organization planning with domestic and foreign industry-study-research partners, and explore China's 12-inch FD-SOI industry development "Corner overtaking" strategic plan comprehensively from the material, manufacturing and design. Through the international technical cooperation and re-innovation, successfully develop a variety of 8-inch SOI wafers, in which, RF-SOI experience has passed the customer verification. SOI wafers applied in power devices access the international mainstream customer group with mass production. SOI International Industry Alliance awarded Director Wang Xi "Outstanding Contribution Award", in recognition of his contributions to China’s SOI materials and industrial chain.