Break through 110 ~ 130nm PCRAM mass production process, and achieve the first embedded PCRAM independent mass production chip in our country, with the rate of finished products of more than 90%. The embedded PCRAM chip is applied internationally for the first time. Through the design and process improvement, 130nmPCRAM chip yield continues to improve, obtaining the purchase order for 15 million PCRAM chip for printer use, becoming the third unit that has achieved PCRAM chip mass production in the world following Micron and Samsung. 40nm PCRAM process is further improved. The independent TiSbTe phase change material is applied in the test chip. Successfully host the 2016 Information Storage International Symposium and the 10th Optical Storage Seminar, which has enhanced the academic status of our institute in the electrical and optical memory, phase change memory, magnetic memory, resistance memory, flash memory, new memory and other fields.