The 7th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices, sponsored by Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, was successfully held in New World Shanghai Hotel from July 24 to 27, 2016. This is the first time that these series of international workshops were held in Asia. More than 80 delegates from 12 countries around the world attended the workshop, including over 30 foreign delegates. Wang Shumin, researcher of SIMIT, international renowned expert on compound semiconductors, served as chairman of the workshop and extended the welcome address on behalf of SIMIT.
The workshop was honored to invite eight famous scientists in the field of bismuth compounds, i.e. Ke He (Tsinghua University, China), Shane R. Johnson (Arizona State University, USA), Tom Tiedje (Victoria University, Canada), Patricia M. Mooney (Simon Fraser University, Canada), Fumitaro Ishikawa (Ehime University, Japan), Stephan W. Koch (Philips University Marburg, Germany), Stephen J. Sweeney (Surrey University, UK) and Masahiro Yoshimoto (Kyoto Institute of Technology, Japan), to give the invited reports. The delegates carried out in-depth and extensive discussion and exchange on dilute bismuth and bismuth-containing topological insulators and other semiconducting materials, devices and theoretical simulations.
At the end of the workshop at noon on the 27th, Researcher Xie Xiaoming, Deputy Director of Shanghai Institute of Microsystem and Information Technology, delivered a closing speech on behalf of SIMIT, congratulating the successful conclusion of the 7th International Workshop on Bismuth-containing Semiconductors. He also presented the certificate of merit and prize to Richards Robert of the University of Sheffield, UK, winner of Best Student/Young Researcher Paper Award. On the afternoon of the 27th, nearly 50 delegates visited the compound semiconductor materials and device research platform of SIMIT, Chinese Academy of Sciences. The delegates had a comprehensive understanding of the research progress that SIMIT has made in the aspects of bismuth semiconductor materials and devices, and highly recognized the results that SIMIT has achieved in the field of bismuth.
As one of the major international academic exchange contents of the 973 project "2.8-4.0 micron room temperature high performance semiconductor laser materials and device preparation research" led by SIMIT, the success convening of this workshop has promoted the international peer academic exchanges in bismuth semiconductor materials, devices and theoretical simulations, and effectively enhanced the international influence of SIMIT in this field.