Renowned as “the silicon integrated circuit technology in the 21st century”, the SOI Technology has important applications in high-speed, low power consumption IC, high voltage power device, and radiation-hardened micro-electronics, etc. Breaking through a series of key technologies in the SOI research field, including cleaning, bonding, fastening, grinding, and polishing, etc. through constant technology innovation, we developed the SIMBONDÒ bonding SOI materials with core proprietary intellectual property rights and mastered the SOI materials radiation hardened technology, which filled the gap in SOI materials localization in China and won the First Prize of Shanghai Scientific and Technological Progress. In 2008, we realized 8-inch wafer bonding and made the first 8-inch bonding SOI wafer in China through developing independently the large-sized wafer bonding platform, which is another significant breakthrough in SOI wafer preparation technology. Researcher Wang Xi was thus granted the Scientific and Technological Progress Award of Ho Leung Ho Lee Foundation in 2008.