The detector in short-wave infrared (1-3 μm) wavelength range is an urgent need in aerospace remote sensing applications. The researchers in State Key Laboratory of Functional Materials kept studying on the short-wave infrared InGaAs detectors for aerospace remote sensing applications since 2003. After their endeavor of around ten years, they have conquered a series of key obstacles and demonstrated InGaAs detector epitaxial wafers with several structures and wavelengths. Furthermore, these detector wafers have been verified by processing to elemental devices and focal panel arrays have then be successfully demonstrated. Figure 1 is the on-earth imaging results using demonstrated InGaAs detector wafers. Figure 2 shows the response spectra of demonstrated InGaAs detectors with different cutoff wavelength. Based on these achievements, “short-wave infrared InGaAs detector epitaxial materials for aerospace remote sensing applications” has been awarded as the second prize of Science and Technology Progress in Shanghai in 2012.

Figure 1 The on-earth imaging results by the demonstrated InGaAs FPAs using the wafers grown by SIMIT.

Figure 2 The response spectra of InGaAs detectors with different cutoff wavelength demonstrated by SIMIT.