Researcher

Da Jiang

Title: Researcher
Subject: 2D materials and heterostructures
Phone: +86-021-62511070
Fax: 
Email: jiangda
@mail.sim.ac.cn
Address: 865 Changning Road, Shanghai,China, 200050

RESUME

I am interested in the electronic properties of two dimensional (2D) materials, especially graphene, boron nitride, 2D superconductors, and their van der Waals heterostructures.

EDUCATION 

Ph.D. in Physics, The University of Manchester, UK                                    Sept. 2006

 

B.S. in Physics, Nanjing University, China                                             July 2000

 

WORK EXPERIENCE

Professor

Feb. 2012 – present

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China

 

Chief Technology Officer                                                 June 2009 – Jan. 2012

Graphene Research Ltd., UK

 

Scientific Director                                                     

Mar. 2007 – June 2009

Graphene Industries Ltd., UK

 

Postdoctoral Associate                                                  

Feb. 2007 – July 2007

School of Physics & Astronomy, The University of Manchester, UK

 

Research Assistant                                                      July 2000 – July 2002

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, China

 

mAJOR HONORS And Awarded Research Funds

The Hundred Talents Award, Chinese Academy of Sciences, China              2013

Oversea Research Student Scholarship, The University of Manchester, UK  2002 – 2005

 

SELECTED PUBLICATIONS

1.       Da Jiang, Tao Hu, Lixing You, Qiao Li, Ang Li, Haomin Wang, Gang Mu, Zhiying Chen, Haoran Zhang, Guanghui Yu, Jie Zhu, Qiujuan Sun, Chengtian Lin, Hong Xiao, Xiaoming Xie, and Mianheng Jiang, High-Tc superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene, Nat. Commun. 5:5708 (2014).

2.      Gang Wang, Miao Zhang, Yun Zhu, Guqiao Ding, Da Jiang, Qinglei Guo, Su Liu, Xiaoming Xie, Paul K. Chu, Zengfeng Di, and Xi Wang, Direct Growth of Graphene Film on Germanium Substrate, Sci. Rep. 3, 2465 (2013).

3.      T. J. Booth, P. Blake, R. R. Nair, D. Jiang, E. W. Hill, U. Bangert, A. Bleloch, M. Gass, K. S. Novoselov, M. I. Katsnelson, and A. K. Geim, Macroscopic Graphene Membranes and Their Extraordinary Stiffness, Nano Lett., 8 (8), 2442 (2008).

4.      P. Blake, P. D. Brimicombe, R. R. Nair, T. J. Booth, D. Jiang, F Schedin, L. A. Ponomarenko, S. V. Morozov, H. F. Gleeson, E. W. Hill, A. K. Geim, and K. S. Novoselov, Graphene-Based Liquid Crystal Device, Nano Lett., 8 (6), 1704 (2008).

5.       A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, Raman Spectrum of Graphene and Graphene Layers, Physical Review Letters, 97, 187401 (2006).

6.      S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. Jiang, and A. K. Geim, Strong suppression of weak localization in graphene, Physical Review Letters, 97, 016801 (2006).

7.       K. S. Novoselov, E. McCann, S. V. Morozov, V. I. Fal'ko, M. I. Katsnelson, U. Zeitler, D. Jiang, F. Schedin and A. K. Geim, Unconventional Quantum Hall Effect and Berry's Phase of 2π in bilayer graphene, Nature Physics, 2, 177-180 (2006).

8.      K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov, Two-Dimensional Gas of Massless Dirac Fermions in Graphene, Nature, 438, 197 (2005).

9.      K. S. Novoselov, D. Jiang, F. Schedin, T. Booth, V.V. Khotkevich, S. M. Morozov, A. K. Geim, Two Dimensional Atomic Crystals, Proceedings of the National Academy of Sciences of the United States of America (PNAS) 102, 10451-10453 (2005).

10.   K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Electric Field Effect in Atomically Thin Carbon Films, Science, 306, 666 (2004).