Prof. Gao received his bachelor degree in physics from Fudan University in 1999. He continued his graduated in study in France. He received engineer diploma from Ecole Polytechnique (Palaiseau) in 2002. He then entered the joint Ph.D program of Ecole Normale Superieure (Paris) and University Paris VI, and received his Ph.D degree in 2006. He worked as post-doc in Delft University of Technology and Max-Planck institute for solid state research in the following years and joined Shanghai institute of microsystem and information technology in 2012. His major research interests are superconducting electronics and electronic properties of low-dimensional materials.
EDUCATION
2003-2006 Ecole Normale Supérieure and University Prais VI, Paris, France
(Ph.D in Physics)
2000-2003 Ecole Polytechnique, Palaiseau, France
(Master in Physics and Engineer diploma)
1999-2000 Fudan University, Shanghai, China
(Graduated study in Physics and language study of French)
1995-1999 Fudan University, Shanghai, China
(Bachelor of Science)
Prof. Gao’s past research activities mainly involve understanding electronic properties of low-dimensional materials by developing new measurement techniques. He realized first non-destructive four-terminal measurements on single-wall carbon nanotubes by using multi-wall carbon nanotubes as voltage probes and observed negative resistance due to quantum interference. He developed a technique which allows in-situ electric measurement on nanowires inside transmission electron microscope. He also developed solid electrolyte gating technique which is a powerful all-solid-state method that can effectively induce large carrier density change in thin-film materials. He is currently working on the development of high-resolution and extremely sensitive photon detectors using superconducting films.
2005 Chinese Government Award of Outstanding self-financed Students abroad
2013 “Pujiang Talent” of Shanghai Municipality
Gate-controlled linear magnetoresistance in Bi2Se3 thin sheets B. F. Gao*, P. Gehring, M. Burghard, K. Kern Appl. Phys. Lett. 100, 212402 (2012)
In-situ Transmission Electron Microscopy imaging of grain growth in a Pt nanobridge induced by electric current annealing B. Gao*, M. Rudneva, K. S. McGarrity, Q. Xu, F. Prins, J. M. Thijssen, H. Zandbergen and H. S. J. van der Zant Nanotechnology 22, 205705 (2011)
Three-terminal electric transport measurements on metal nano-particles combined with ex-situ TEM inspection B. Gao, E. A. Osorio, K. Babaei Gaven and H. S. J. van der Zant Nanotechnology 20, 415207 (2009) (featured article)
Four-point resistance of individual single-wall carbon nanotubes B. Gao, Y.F. Chen, M.S. Fuhrer, D.C. Glattli, A. Bachtold
Evidence for Luttinger-Liquid Behavior in Crossed Metallic Single-Wall Nanotubes B. Gao, A. Komnik, R. Egger, D.C. Glattli, A. Bachtold
