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Yuansen Xu
2009-08-12 | A A A  【print】【close

Academician of China Engineering Academy






Yuansen Xu, metallurgy and microelectronic expert, Academician of the Chinese Academy of Engineering, was born in Jiangshan, Zhejiang province on 22 May, 1926. Graduated from the Department of Chemical Engineering of Zhejiang University in 1950, he joined the Chinese Academy of Sciences in the same year He is now Researcher and Ph.D. supervisor of Shanghai Institute of Microsystem and Information Technology, CAS. He was elected Academician of the Chinese Academy of Engineering in 1995.

He studied the iron and steel smelting in 1950s, and verified the law of fluorine changes in the blast furnace. He proposed the blow tuyere injection technology, ensuring the flow of blast furnace slag and overcoming difficulties in blast furnace smelting of fluorine-bearing, lanthanon, and ferro-titanium iron ores in China, further providing the scientific basis for the founding of the two steel and iron bases in China, Baotou and Panzhihua. He won National Natural Sciences Awards for many times. In 1960s, he started the research on the semiconductor and integrated circuit, and successfully developed China’s first group of DTL, TTL, and ECL, etc. series integrated circuits, and provided main devices to the large-sized computers in China. He successfully developed several systematic integrated circuits and pushed the domestic CMOS LSI development in 1980s. He led the successful development of the 120-gate and 600-gate ultra high speed gallium arsenide gate array circuit. In the research of very-large scale integrated circuit (VLSI) process, he invented the new process of 100A ultra-thin SiO2 growth. Later he studied the submicron integrated circuit and GaAs circuit process, and invented the new isolation technology and the new silicon oxidation method.

For more than 30 years, he led his team in the successful development of over 100 types of 7 systems integrated circuits. He had over 10 publications and three patents. He won the 1st Prize in National Scientific and Technological Progress for his contribution in the development of high speed and ultra high speed bipolar digital ICs; in addition. He also won the 1st Prize of National Invention once and the 3rd Prize of National Natural Sciences twice. He was honored National Model Worker in 1980, and won the Science & Technology Progress Award of He-Liang-He-Li Fund in 2005.

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