Dr. Yang Li from Peregrine semiconductor made the speech High Performance RF Design with CMOS Silicon on Insulator Technology in SIMIT on 13th Oct., which is held by the 5th R&D department and HR department. Director of the 5th R&D department Weixiao Sun chaired the report meeting and HR director Yaohui Yu participated.

Dr. Li gave the induction about the international RF development and the design of high performance RF, especially comparing the advantages of CMO, SOI and SOS in detail. He presented his personal opinion on the next development of RF design. More than 30 people took part in the report meeting and actively interacted with Dr. Li.