Phase change memory (PCRAM) is expected to replace Flash as one of the next generation of non-volatile memory chips with faster speed, higher memory density and better endurance. Shanghai Institute of Microsystem and Information Technology (SIMIT) and SMIC cooperated to solve the non-standard storage unit and CMOS technology process integration, develop the 110 ~ 130nm PCRAM production process, achieve China's first embedded PCRAM chips, making the embedded PCRAM chip in the international community has been the first application. SIMIT is the third unit to realize mass production of PCRAM chip following Micro, Samsung, the current 0.13um process printer with PCRAM embedded products have been 15 million orders, the future is expected to have hundreds of millions of each year Dosage.

　　With the development of PCRAM products, PCRAM chip will be applied to high-speed data processing, mobile storage, mobile electronic key of bank, solid-state storage hard drive and other fields, which is to promote China's independent storage industry development, change China's storage chip In part rely on the status of foreign imports, enhance the country's information security, promote economic development transformation and upgrading, will play a very important role.

　　High purity colloidal silica and slurry are important consumable materials for the atomic planarization process in IC, LED, mobile-phone and so on, and the key technologies and fabrication processes were occupied by some international corporations. We have researched and developed a new ion exchange method to obtain high purity colloidal silica and self-help established a production line with 10,000 tons annual capacity. New GST slurry has been successfully used in the fabrication of phase change memory. We have developed sapphire slurry with high polishing efficiency, and the new product occupied more than 70% domestic LED market. Series new metal polishing slurry has been widely used in the fabrication of mobile phone, pad and computer. The project has a direct economic benefit of 100 million and indirect economic benefits greater than 1.37 billion. It breaks the international monopoly and plays an important role in improving the competitiveness of our electronic industry.