RESUME
Ph.D, Director of State Key Laboratory of Functional Materials for Informatics, Academic Pacemaker of Nano Electronic Material and Devices. His researches focus on phase-change materials and CMP Slurry. As the Chief Scientist and Project Director of National Integrate Circuit Research Program and National Program on Key Basic Research Project (973 A) of China, he has undertaken or is undertaking more than 50 national or provincial research projects: "Strategic Priority Research Program" of the Chinese Academy of Sciences, National High-tech R&D Program of China (863), National Natural Science Foundation of China, etc. He has applied for over 400 patents, and published more than 200 papers in Nature Communications, Nanoscale, Scientific Report, etc, and 2 monographs in PCM area. He has led a team of more than 150 people on SMIC and Microchip, and set up 12 inches PCRAM special technology platform. He has developed China's first PCM test chip, and brought PCM test chip to mass production for the first time in China.
EDUCATION
Institution Degree Date Major
Shanghai Institute of Microsystem Post PhD (hIghest degree) 1998.2 - 1999.11 Materials Science and Engineering
Xi'an Jiaotong University PhD 1994.9 - 1997.11 Electronic materials and devices
Xi'an Jiaotong University M.E 1989.9 - 1992.7 Electronic Engineering
Shanxi University B.S 1981.9 - 1985.7 Physics
work EXPERIENCE
Company Titles Date
Taiyuan Heavy Machinery Institute Assistant 1985.7-1989.8
(Taiyuan University Of Science And Technology)
Yuci Jingwei Textile Machinery Engineer 1992.7-1994.8
Shanghai Institute of Microsystem Research Associate 1999.12-2000.5
and Information Technology
The Hong Kong Polytechnic University R. F/ R. A 2000.5-2001.3
Department of Applied Physics (Research Finale/Research Associate)
Shanghai Institute of Microsystem Director 2001.3-2002.10
and Information Technology
Shanghai Institute of Microsystem Research/Director/ Ph.D. supervisor 2006.1-
and Information Technology(Nano Technology Laboratory)
State Key Laboratory of Functional Deputy Director 2003.1-
Materials for Informatics
HONORS AND AWARDED RESEARCH FUNDS
He is an outstanding teacher acknowledged by the Chinese Academy of Sciences and a brilliant leading scientist acknowledged by the municipal government of Shanghai. He has received the National Science and Technology Progress Award (the first prize), Shanghai Science and Technology Progress Award (First Prize), the Outstanding Technology Achievement Award, Special Government Allowance and other honors.
SELECTED PUBLICATIONS
1. Rao, F., Song, Z., Cheng, Y., Liu, X., Xia, M., Li, W., Ding, K., Feng, X., Zhu, M. & Feng, S. Direct observation of titanium-centered octahedra in titanium-antimony-tellurium phase-change material. Nat. Commun. 6, 10040 (2015).
2. Zhu, M., Xia, M., Rao, F., Li, X., Wu, L., Ji, X., Lv, S., Song, Z., Feng, S., Sun, H. & Zhang, S. One order of magnitude faster phase change at reduced power in Ti-Sb-Te. Nat. Commun. 5, 4086 (2014).
3. Zhou, X., Xia, M., Rao, F., Wu, L., Li, X., Song, Z., Feng, S. & Sun, H. Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application. ACS Appl. Mater. Interfaces 6, 14207–14 (2014).
4. Xia, M., Zhu, M., Wang, Y., Song, Z., Rao, F., Wu, L., Cheng, Y. & Song, S. Ti–Sb–Te Alloy: A Candidate for Fast and Long-Life Phase-Change Memory. ACS Appl. Mater. Interfaces 7, 7627–7634 (2015).
5. Zhu, M., Xia, M., Song, Z., Cheng, Y., Wu, L., Rao, F., Song, S., Wang, M., Lu, Y. & Feng, S. Understanding the crystallization behavior of as-deposited Ti--Sb--Te alloys through real-time radial distribution functions. Nanoscale 7, 9935–9944 (2015).
6. Xia, M., Ding, K., Rao, F., Li, X., Wu, L. & Song, Z. Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change properties. Sci. Rep. 5, (2015).
7. US8476085B1;双浅沟道隔离的外延二极管阵列的制备方法;张超,宋志棠,万旭东,刘波,吴关平,张挺,杨左娅,谢志峰;2013/7/2授权
8. US8920684B2;用于相变存储器的Al-Sb-Te系列相变材料及其制备方法 彭程,吴良才,饶峰,宋志棠,刘波,周夕琳,朱敏; 2014/12/30授权
9. US8722455B2;一种具有低k介质绝热材料的相变存储器结构及制备方法;宋志棠,吴良才,封松林2014/5/13授权
10. US8947924B2;相变存储器的数据读出电路;李喜,陈后鹏,宋志棠,蔡道林;2015/2/3授权
11. US9362493B2;用于替代DRAM及FLASH的相变存储单元及其制作方法;饶峰,任堃,宋志棠,龚岳峰,任万春;2016/2/5授权
12. US9276202B2;含有TiSiN材料层的相变存储单元及其制备方法;宋志棠,龚岳峰,饶峰,刘波,亢勇,陈邦明; 2016/3/1授权
13. US14/129957;一种用于相变存储器的富锑高速相变材料及其制备方法和应用; 宋志棠,吴良才,彭程,饶峰,朱敏;2015/7/23受通
14. US14/123454;相变存储单元及其制备方法; 宋志棠,任堃,饶峰,宋三年,陈邦明;2015/8/6受通
15. US13/885894;一种Sb-Te-Ti相变存储材料及Ti-Sb2Te3相变存储材料;朱敏, 吴良才, 宋志棠, 饶峰, 彭程, 周夕淋, 任堃, 封松林;2016/4/7受通
16. PCT/CN2015/098732;存储阵列、存储对象逻辑关系的存储芯片及方法;陈小刚,宋志棠,宋三年,李喜,陈后鹏;2015/12/24受通
17. PCT/CN2016/096334;用于相变存储器的相变材料及其制备方法;丁科元,饶峰,王勇,宋志棠;2016/8/23受通
18. PCT/CN2016/096649;一种相变存储器读出电路及读出方法;雷宇,陈后鹏,李喜,王倩,宋志棠; 2016/8/25受通
19. PCT/CN2016/097876;多分散大粒径硅溶胶及其制备方法;孔慧,刘卫丽,宋志棠2016/7/26受通
20. PCT/CN2016/097894;一种成膜硅溶胶及其制备方法与应用;王永霞,刘卫丽,宋志棠;2016/7/26受通
21. PCT/CN2016/097897;一种氧化铝抛光液的制备方法; 汪为磊,刘卫丽,宋志棠; 2016/7/26受通
