RESUME
Shichang Zou, materials scientist, was selected as the academician of the Chinese Academy of Sciences (Academy Member) in 1991. He graduated from Tangshan Jiaotong University in 1952, and received his Ph.D. degree from Moscow Nonferrous Metal Institute in 1958. He was appointed as visiting professor of Fraunhofer-Gesellschaft Solid Technological Research Institute from 1979 to 1980. In the 1960s, Zou was responsible for key national defense subject Type A separating film processing and shaping. As the main inventor of selective preference in the technical guidelines, he made remarkable contribution to the nuclear industry and atomic bomb explosion for our country. Since the early 1970s, Zou conducted systematic study on ion beam solid interactions and used ion beams for the doping, synthesis, fabrication and surface layer analysis of semiconductor materials. He innovatively applied carbon dioxide laser backside irradiation to achieve enhanced annealing effect of ion implantation damage, and developed the first l20-gate gallium arsenide gate array circuit with the all directions ion implantation technology in China. He also processed the first group of blinking holographic gratings with reactive ion beam in China, and developed the Ion Beam Enhanced Deposit (IBED) technology and the synthesized silicon nitride and titanium nitride film. As the early pioneer in SOI material in China, he developed the CMOS／SOI circuit. In the 1990s, Zou was dedicated to the development of the semiconductor industry of mainland China. He participated in the establishment of several IC companies, including Shanghai Huahong Electronics Co., Shanghai Simcomix Electronics, DuPont Photomasks and Shanghai Ericsson Simtek Electronics Co. With the support of Zou, Shanghai Huahong Grace Semiconductor Manufacturing Corporation has insisted on cultivating doctorial students by combination of production, learning and research for the last more than ten years, which has been fully recognized by the Guidance office of Shanghai academician expert workstation. The Shanghai Huahong Grace Semiconductor academician expert workstation was approved in early 2014, and awarded as the national demonstration academician expert workstation in 2016. He published over 200 scientific papers, mentored more than 30 Ph.D. students, and won 14 prizes including National First-Grade Invention prize. He is an honorary international committee member of the conference of Ion Beam Modification of Materials (IBMM).
EDUCATION
B.E., 1952, Tangshan Jiaotong University
Ph.D., 1958, Moscow Nonferrous Metal Institute
WORK EXPERIENCE
Visiting professor, Fraunhofer Society in Munich, Germany, 1979 -1980
Director, Shanghai Institute of Microsystem and Information Technology, CAS, 1983-1997
Professor, Shanghai Institute of Microsystem and Information Technology, CAS, 1983-the present
Vice Chairman, Shanghai Huahong NEC Electronics Co., 1997-2003
Chairman, Shanghai Pudong Association for Science and Technology, 2001-2006
Chairman, Shanghai IC Industry Association, 2001- 2009
Chairman, Shanghai Huahong Grace Semiconductor Manufacturing Co., 2003-2007
Science Consultant, Shanghai Huahong Grace Semiconductor Manufacturing Co., 2007-the present
Board Member, Shanghai Huali Microelectronics Co., 2009-the present
Honorary Chairman, Shanghai IC Industry Association, 2009- present
mAJOR HONORS
2008 China Semiconductor Industry Pathfinder Award
2003 Outstanding Talent in Shanghai Pudong Development and Construction by the SEMI
1997 The second class CAS Invention Award
1996 The second class Shanghai Technological Progress Award
1995 The second class CAS Natural Science Award
1994 The second class Shanghai Technological Progress Award
1992 The second class Shanghai Technological Progress Award
1990 The second class CAS Natural Science Award
1990 The first class CAS Scientific and Technological Progress Award
1990 The first class CAS Scientific and Technological Progress Award
1989 The third class National Technological Progress Award
1988 The third class Shanghai Technological Progress Award
1987 The second class CAS Scientific and Technological Progress Award
1986 The third class Shanghai Technological Progress Award
1984 The first class National Invention Award
1982 The second class CAS Significant Science and Technology Achievement Award
1956 The second class CAS Science Award
SELECTED PUBLICATIONS
1. Deutch BI, Tsou SC, Leou SH, Zhou ZY, Zeng HJ, Dai RZ, Chu TC, Cao DX, Pulsed, Q-Switched Ruby-Laser Annealing of Bi Implanted Si Crystals Investigated by Channeling, Radiation Effects and Defects in Solids, 45(1-2):103-109(1979).
2. Tsou SC, Tsien PH, Takai M, Roschenthaler D, Ramin M, Ryssel H, Ruge I, Front and Back Surface CW CO2-Laser Annealing of Arsenic Ion-Implanted Silicon, Applied Physics, 23(2):163-168(1980).
3. Takai M, Tsou SC, Tsien PH, Roschenthaler D, Ryssel H, ND-YAG Laser Annealing of Gallium-Implanted Silicon, Applied Physics, 24(4):319-322(1981).
4. Fang F, Lin CL, Shen ZY, Tsou SC, Laser Recrystallization and Hydrogen Plasma Annealing of Ion-Implanted Polysilicon, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 7(8):348-351(1985).
5. Liu XH, Tsou SC, Tu YS, Improvement of Secondary-Electron Emission Characteristics by Ion-Implanted, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 21(2-4):595-596(1987).
6. Ren CX, Chen GL, Zheng Y, Chen JM, Yang J, Zhang CS, Xie Lm, Zou SC, Fabrication and Interface Reaction of Y-Ba-Cu-O Superconducting Thin Films by Reactive Ion Beam Coating, IEEE Transactions on Magnetics, 25(2):2463-2465(1989).
7. Wang X, Liu XH, Zou SC, Martin PJ, Bendavid A, Atomic Force Microscopy Study on Topography of Films Produced by Ion-Based Techniques, Journal of Applied Physics, 80(5):2658-2664(1996).
8. Song ZR, Yu YH, Li CL, Zou SC, Zhang FM, Wang X, Shen DS, Luo EZ, Sundaravel B, Wong SP, Wilson IH, Tetrahedral Amorphous-Carbon Thin Films for Silicon-On-Insulator Application, Applied Physics Letter, 80(5):743-745(2005).
9. Feng T, Dai LJ, Jiang J, Wang X, Liu XH, Zou SC, Li Q, Xu JF, Memory Emission of Printed Carbon Nanotube Cathodes, Applied Physics Letters, 88(20): 203108, (2006).
10. Fang N, Yang ZF, Wu AM, Chen J, Zhang M, Zou SC, Wang X, Three-Dimensional Tapered Spot-Size Converter Based on (111) Silicon-on-Insulator, IEEE Photonics Technology Letters, 21(9-12): 820-822(2009).
