RESUME
Ph.D. supervisor, received his Ph.D degree under the supervisor of Academician Fuxi Gan in Shanghai Institute of Optics and fine Mechanics, CAS in 2003. He is the Chief Scientist of National “973” Key Basic Research Project. His main research directions include phase-change memory key materials and chip process technology. He has undertaken or participated in more than 30 research projects, such as National Integrated Circuit Major Program and, 973/863 Programs etc. He has published 221 papers, and applied for 129 patents (118 patents have been authorized). He was engaged in the publication of “China Materials Engineering Canon”, “Photonics Technology and Application“, “Phase Change Memory” and “Da Cihai”. He has supervised 13 postgraduate students and co-supervised 15 ones.
WORK EXPERIENCE
Company Titles Date
Shanghai
Shanghai
EDUCATION
Institution Degree Date Major
Shanghai Institute of Microsystem Post doctor 2003.6-2005.3 Microelectronics and Solid State Electronics
and Information Technology, CAS
Shanghai
and Fine Mechnics Electronic
and Fine Mechnics Electronic
HONORS AND AWARDED RESEARCH FUNDS
2012: Member of Youth Innovation Promotion Association of
2009:
2008: Lu Jiaxi Young Talent Award of
2006:
SELECTED PUBLICATIONS
1. Bo Liu. Data Storage at the Nanoscale: Advances and Applications (Editor: Fuxi Gan and Yang Wang), Chapter 11-Phase Change Random Access Memory, Pan Stanford Publishing Pte. Ltd., 2015.1, Singapore: 463-589
2. Sai Sun, Xiaodong Zhuang*, Luxin Wang, Bo Liu*, Bin Zhang, Yu Chen*. BODIPY-based conjugated polymer grafted reduced graphene oxide for flexible nonvolatile memory devices, Carbon, 2017, 116: 713-721
3. Qing Wang, Minghui Jiang, Bo Liu*, Yang Wang*, Yonghui Zheng, Sannian Song, Yiqun Wu, Zhitang Song, Songlin Feng. Reversible phase change characteristics of Cr-doped Sb2Te3 films with different initial states induced by femtosecond pulses, ACS Applied Materials & Interfaces, 2016, 8(32): 20885-20893
4. Qing Wang, Bo Liu*, Yangyang Xia, Yonghui Zheng, Ruru Huo, Qi Zhang, Sannian Song, Yan Cheng, Zhitang Song, Songlin Feng. Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory, Appl. Phys. Lett., 2015, 107(22): 222101
5. Yan Liu, Chao Zhang, Zhitang Song, Bo Liu*, Guanping Wu, Jia Xu, Lianhong Wang, Lei Wang, Zuoya Yang and Songlin Feng. Cost-effective schottky-barrier diode array with Ni-silicidation accessing low power phase-change memory, IEEE Transactions on Electron Devices, 2014, 61(3): 682-687
6. Yan Liu, Zhitang Song, Bo Liu*, Guanping Wu, Houpeng Chen, Chao Zhang, Lianhong Wang, and Songlin Feng. Optimization of 40nm node epitaxial diode array for phase-change memory application, IEEE Electron Device Letters, 2012, 33(8): 1192-1194
7. Bo Liu*, Zhitang Song, Songlin Feng, and Bomy Chen. Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material, Microelectronic Engineering, 2005, 82(2): 168-174
8. Bo Liu*, Zhitang Song, Ting Zhang, Jilin Xia, Songlin Feng, and Bomy Chen. Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film, Thin Solid Films, 2005, 478(1-2): 49-55
9. Bo Liu*, Zhitang Song, Ting Zhang, Songlin Feng, Bomy Chen. Effect of O-implantation on the structure and resistance of Ge2Sb2Te5 film, Appl. Surf. Sci., 2005, 242(1-2): 62-69
10. Bo Liu*, Ting Zhang, Jilin Xia, Zhitang Song, Songlin Feng, Bomy Chen. Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory, Semiconductor Science and Technology, 2004, 19(6): L61-L64
