RESUME
Feng RAO, PhD., Associate Professor. His major research interests include Phase Change Random Access Memory (PCRAM) materials science and electronics devices. He has published over 90 SCI-indexed scientific papers (~40 with first or corresponding author) on the journals such as Nature Communications and Nano Research, etc. He has also been authorized 43 invention patents (2 US patents), as the first inventor in 7 of them (1 US patent). Currently, he is a member of the Editorial Board of the journal Scientific Reports.
EDUCATION
work EXPERIENCE
(2009/03-now )
Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
State Key Laboratory of Functional Materials for Informatics, Associate Professor
(2004/03-2006/03)
China Aerospace Times Electronics Corp.
Integrated optics department, Assistant Engineer
SELECTED PUBLICATIONS
1. Feng Rao, Zhitang Song, Yan Cheng, Xiaosong Liu, Mengjiao Xia, Wei Li, Keyuan Ding, Xuefei Feng, Min Zhu, and Songlin Feng. Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material, Nature Communications 5: 10040, 2015.
2. Min Zhu, Mengjiao Xia, Feng Rao†, Liangcai Wu, Xianbin Li, Zhitang Song, Xinglong Ji, Shilong Lv, Hongbo Su,Shengbai Zhang, and Songling Feng. One order of magnitude faster phase change at reduced power in Ti-Sb-Te, Nature Communications 5: 4086, 2014.
3. Yonghui Zheng, Mengjiao Xia, Yan Cheng, Feng Rao†, Keyuan Ding, Weili Liu, Yu Jia, Zhitang Song, Songlin Feng. Direct observation of metastable face-centered cubic Sb2Te3 crystal, Nano Research 9: 3453, 2016.
4. Keyuan Ding, Feng Rao†, Shilong Lv, Yan Cheng, Liangcai Wu, Zhitang Song. Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae, Scientific Reports 6: 30645, 2016.
5. Xilin Zhou, Mengjiao Xia, Feng Rao†, Liangcai Wu, Xianbin Li, Zhitang Song, Songlin Feng, and Hongbo Sun. Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application, ACS Applied Materials & Interface 6: 14207, 2014.
6. Mengjiao Xia, Keyuan Ding, Feng Rao†, Xianbin Li, Liangcai Wu, Zhitang Song. Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties, Scientific Reports 5: 8548, 2015.
7. Mengjiao Xia, Min Zhu, Yuchan Wang, Zhitang Song, Feng Rao, Liangcai Wu, Yan Cheng, and Sannian Song. Ti−Sb−Te Alloy: A Candidate for Fast and Long-Life Phase-Change Memory, ACS Applied Materials & Interface 7: 7627, 2015.
8. Min Zhu, Mengjiao Xia, Zhitang Song, Yan Cheng, Liangcai Wu, Feng Rao, Sannian Song, Miao Wang, Yegang Lu, and Songlin Feng. Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions, Nano Scale 7: 9935, 2015.
9. Chengqiu Zhu, Jun Ma, Xiaoming Ge, Feng Rao†, Keyuan Ding, Shilong Lv, Liangcai Wu, and Zhitang Song. Low-energy phase change memory with graphene confined layer, Applied Physics Letters 108: 252102, 2016.
10. Keyuan Ding, Kun Ren, Feng Rao†, Zhitang Song,Liangcai Wu, Bo Liu, and Songlin Feng. Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory, Materials Letters 125: 143, 2014.
11. Kun Ren, Mengjiao Xia, Feng Rao†, Zhitang Song, Keyuan Ding, Xinglong Ji, Liangcai Wu, Bo Liu, and Songlin Feng. Study on the nitrogen-doped W-Sb-Te material for phase change memory application, Applied Physics Letters 104: 173102, 2014.
12. Cheng Peng, Feng Rao†, Liangcai Wu, Zhitang Song, Yifeng Gu, Dong Zhou, Hongjia Song, Pingxiong Yang, Junhao Chu. Homogeneous phase W–Ge–Te material with improved overall phase-change properties for future nonvolatile memory, Acta Materialia 74: 49, 2014.
13. Min Zhu, Liangcai Wu, Feng Rao†, Zhitang Song, Mengjia Xia, Xinglong Ji, Shilong Lv, and Songling Feng. The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory, Applied Physics Letters 104: 063105, 2014.
14. Min Zhu, Liangcai Wu, Feng Rao†, Zhitang Song, Kun Ren, Xinglong Jia, Sannian Song, Dongning Yao, and Songlin Feng. Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications, Applied Physics Letters, 104: 053199, 2014.
15. Kun Ren, Feng Rao†, Zhitang Song, Shilong Lu, Cheng Peng, Min Zhu, Liangcai Wu, Bo Liu, and Songlin Feng. Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory, Journal of Alloys and Compounds, 594: 82, 2014.
16. Kun Ren, Feng Rao†, Zhitang Song, Shilong Lv, Min Zhu, Liangcai Wu, Bo Liu, and Songlin Feng. Study on the impact of the initialization process on the phase change memory, Applied Physics Letters 102: 213503, 2013.
17. Cheng Peng, Liangcai Wu, Feng Rao†, Zhitang Song, Shilong Lv, Xilin Zhou, Xiaofeng Du, Yan Cheng, Pingxiong Yang, and Junhao Chu. A simple method used to evaluate phase-change materials based on focused-ion beam technique, Applied Physics Letters 102: 203510, 2013.
18. Mengjiao Xia, Feng Rao†, Zhitang Song, Kun Ren, Liangcai Wu, Bo Liu, and Songlin Feng. An Improvement of the Thermal Stability of SnTe through Nitrogen Doping, Chinese Physics Letters, 30 (3): 037401, 2013.
19. Kun Ren, Feng Rao†, Zhitang Song, Liangcai Wu, Mengjiao Xia, Bo Liu, and Songlin Feng. Investigation of Al doping on Ge55Te45 for phase change memory application, Journal of Applied Physics 113: 234312, 2013.
20. Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao†, Kun Ren, Cheng Peng, Sannian Song, Bo Liu, Ling Xu, and Songlin Feng. Phase transition characteristics of Al-Sb phase change materials for phase change memory application, Applied Physics Letters 103: 072114, 2013.
21. Kun Ren, Feng Rao†, Zhitang Song, Cheng Peng, Juntao Li, Liangcai Wu, Bo Liu, and Songlin Feng. Study on the Thermal Stability Improvement of GeTe by Al Doping, Applied Physics Letters 103: 093111, 2013.
22. Xilin Zhou, Liangcai Wu, Zhitang Song, Yan Cheng, Feng Rao†, Kun Ren, Sannian Song, Bo Liu, and Songlin Feng. Nitrogen-doped Sb-rich Si-Sb-Te Phase-change Material for High Performance Phase-change Memory, Acta Materialia 61: 7324, 2013.
23. Min Zhu, Liangcai Wu, Feng Rao†, Zhitang Song, Xinglong Jia, Dongning Yao, Yan Cheng, Shilong Lv, Sannian Song, Bo Liu, and Ling Xu. The Effect of Titanium Doping on the Structure and Phase Change Characteristics of Sb4Te, Journal of Applied Physics, 114: 124302, 2013.
24. Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao†, Min Zhu, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, and Songlin Feng. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application, Applied Physics Letters 101: 102104, 2012.
25. Cheng Peng, Liangcai Wu, Feng Rao†, Zhitang Song, Pingxiong Yang, Hongjia Song, Kun Ren, Xilin Zhou, Min Zhu, Bo Liu, and Junhao Chu. W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention, Applied Physics Letters 101: 122108, 2012.
26. Cheng Peng, Liangcai Wu, Feng Rao†, Zhitang Song, Pingxiong Yang, Limin Cheng, Juntao Li, Xilin Zhou, Min Zhu, Bo Liu, and Junhao Chu. Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory, ECS Solid State Letters 1 (2): 38, 2012.
27. Kun Ren, Feng Rao†, Zhitang Song, Shilong Lv, Yan Cheng, Liangcai Wu, Cheng Peng, Xilin Zhou, Mengjiao Xia, Bo Liu, and Songlin Feng. Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application, Applied Physics Letters 100: 052105, 2012.
28. Feng Rao†, Zhitang Song, Yan Cheng, Mengjiao Xia, Kun Ren, Liangcai Wu, Bo Liu, Songlin Feng. Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials, Acta Materialia 60: 323, 2011.
29. Cheng Peng, Zhitang Song, Feng Rao†, Liangcai Wu, Min Zhu, Hongjia Song, Bo Liu, Xilin Zhou, Dongning Yao, Pingxiong Yang, and Junhao Chu. Al1.3Sb3Te material for phase change memory application, Applied Physics Letters 99: 043105, 2011.
30. Feng Rao†, Zhitang Song, Kun Ren, Xilin Zhou, Yan Cheng, Liangcai Wu, and Bo Liu. Si-Sb-Te materials for phase change memory applications, Nanotechnology 22: 145702, 2011.
31. Feng Rao†, Kun Ren, Yifeng Gu, Zhitang Song, Liangcai Wu, Xilin Zhou, Bo Liu, Songlin Feng, and Bomy Chen. Nano composite Si2Sb2Te film for phase change memory, Thin Solid Films 519: 5684, 2011.
32. Feng Rao†, Zhitang Song, Kun Ren, Xuelai Li, Liangcai Wu, Wei Xi, and Bo Liu. Sn12Sb88 material for phase change memory, Applied Physics Letters 95: 032105, 2009.
33. Feng Rao†, Zhitang Song, Liangcai Wu, Yuefeng Gong, Songlin Feng, and Bomy Chen. Phase Change Memory Cell Based On Sb2Te3/TiN/Ge2Sb2Te5 Sandwich-Structure, Solid-State Electronics 53: 276, 2009.
34. Feng Rao†, Zhitang Song, Yuefeng Gong, LiangcaiWu, Songlin Feng, and Bomy Chen. Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode, Nanotechnology 19: 445706, 2008.
35. Feng Rao†, Zhitang Song, Ting Zhang, Yuefeng Gong, Liangcai Wu, Songlin Feng, and Bomy Chen. Polycrystalline Si-rich SiSbx bottom heating layer for phase change memory, Electrochemical and Solid-State Letters 11: H147, 2008.
36. Feng Rao†, Zhitang Song, Yuefeng Gong, Liangcai Wu, Bo Liu, Songlin Feng, and Bomy Chen. Phase change memory cell using tungsten trioxide bottom heating layer, Applied Physics Letters 92: 223507, 2008.
37. Feng Rao†, Zhitang Song, Liangcai Wu, Bo Liu, Songlin Feng, and Bomy Chen. Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films, Applied Physics Letters 91: 123511, 2007.
38. Feng Rao†, Zhitang Song, Liangcai Wu, Min Zhong, Songlin Feng, and Bomy Chen. Phase change memory cell with an upper amorphous nitride silicon germanium heating layer, Applied Physics Letters 91: 073505, 2007.
39. Feng Rao†, Zhitang Song, Liangcai Wu, Songlin Feng, and Bomy Chen. Set and reset properties of phase change memory cells with double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3), Journal of the Electrochemical Society 154: H999, 2007.
40. Feng Rao†, Zhitang Song, Min Zhong, Liangcai Wu, Gaoming Feng, Bo Liu, Songlin Feng, and Bomy Chen. Multilevel data storage characteristics of phase change memory cell with doublelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3), Japanese Journal of Applied Physics, Part 2: Letters 46: L25, 2007.
HONORS AND AWARDED RESEARCH FUNDS
2016: National Science Fund for Excellent Young Scholars
2014: Lu Jiaxi Young Talent Award of Chinese Academy of Sciences
2012: Shanghai Rising-Star Program (Class A)
2011: Member of Youth Innovation Promotion Association of Chinese Academy of Sciences
2011: National Excellent Doctoral Dissertation of China Award Nomination
2010: National Natural Science Foundation of China for Young Scholars
2010: Outstanding Doctoral Dissertation, Chinese Academy of Sciences
2009: President Award of excellence, Chinese Academy of Sciences
