Research Associate

Daolin Cai

Title: Associate Professor
Subject: Phase change memory
Phone: +86-021-62511070
Fax: +86-021-62524192
Address: 865 Changning Road, Shanghai,China, 200050


He received a B.S. degree from Chengdu University of Technology and a M.S. degree from Sichuan University in June 1999 and June 2003, respectively, and his PhD. degree from University of Electronic Science and Technology of China in June 2008. From June, 2008 to December, 2010, he worked as a postdoctoral fellow at the State Key Laboratory of Functional Materials for Informatics of Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS). From January 2011 to the present, he has served as an associate professor at the State Key Laboratory of Functional Materials for Informatics of SIMIT.


B.S., 1999, Chengdu University of Technology

M.S., 2003, Sichuan University

Ph.D., 2008, University of Electronic Science and Technology of China


Associate Professor, SIMIT, 2011-present

Assistant Research Fellow, SIMIT, 2010-2011

Postdoctoral Fellow, SIMIT, 2008-2010


1. Cai, DaolinChen, HoupengWang, QianChen, YifengSong, ZhitangWu, GuanpingFeng, SonglinAn 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage CellIEEE Electron Device Letters, 33(9), pp 1270-1272, 2012/9

2. Cai, DaolinSong, ZhitangChen, HoupengChen, XiaogangTemperature model for Ge2Sb2Te5 phase change memory in electrical memorydeviceSolid-State Electronics2011561):13-17

3. Cai Dao-LinSong Zhi-TangLi XiChen Hou-PengChen Xiao-GangA Compact Spice Model with Verilog-A for Phase Change MemoryChinese Physics Letters2011281

4. Cai Daolin, Li Ping, Zhai Yahong, Song Zhitang, Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked bufferlayerJournal of Semiconductors2011,(09):54-57

5. Cai, DaolinLi, PingZhai, YahongLiu, JingsongZhang, ShurenOu, YangfanChen, YanyuWu, DongshenFabrication and electrical

6. characteristics of a metal-ferroelectric-polysilicon-insulator-Si field effect

7. transistorIntegrated Ferroelectrics20089846-52

8. Cai, DaolinLi, PingZhang, ShurenZhai, YahongRuan, AiwuOu YangfanChen, YanyuWu, DongshenFabrication and characteristics of a metal/ferroelectric/polycrystalline silicon/insulator/silicon field effect transistorApplied Physics Letters20079015

9.  Song, ZhitangZhan, YiPengCai, DaolinLiu, BoChen, YifengRen, Jiadong A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS TechnologyNano-Micro Letters, 7(2), pp 172-176, 2015/4 ( Corresponding author)

10. Yao-Yao Lu, Dao-Lin Cai, Yi-Feng Chen, Yue-Qing Wang, Hong-Yang Wei, Ru-Ru Huo, Zhi-Tang Song, Current Controlled Relaxation Oscillations in Ge2Sb2Te5-Based Phase Change Memory Devices MemoryChinese Physics Letters2016333038503 ( Corresponding author)

11. Yueqing Wang, Daolin Cai, Yifeng Chen, Yuchan Wang, Hongyang Wei, Ruru Huo, Xiaogang Chen, and Zhitang Song, Reduction of Reset Current in Phase Change Memory by Pre-Programming ECS Journal of Solid State Science and Technology, 5(2) Q13-Q16 (2016) ( Corresponding author)

12. Wang, YueqingCai, DaolinChen, YifengWang, YuchanWei, HongyangHuo, RuruChen, XiaogangSong,Zhitang Optimizing Set Performance for Phase Change Memory with Dual Pulses Set MethodEcs Solid State Letters, 4(7), pp Q32-Q35, 2015