Research Associate

Zhongying Xue

Title: Research Associate
Subject: 
Microelectronics
Phone: +86-021-62511070
Fax: +86-021-62524192
Email: 
simsnow@mail.sim.ac.cn
Address: 865 Changning Road, Shanghai,China, 200050

RESUME

Zhongying Xue received his B.S. and M.S. degree from Shandong University in 1999 and 2002, respectively. From 2002 to 2007, he worked at the Integrated Electronic Systems Lab Co., Ltd. as a program engineer. From 2008 to 2011, He pursued his Ph.D. degree at Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, and was conferred on PH.D. degree in June 2011. From July 2011 to Dec. 2013, he was a Research Assistant at SIMIT, and from 2014 to present, he has served as a Research Associate. His current researches focus on high carrier mobility materials, such as strained Silicon on Insulator (sSOI)Germanium on Insulator (GOI) and Extremely Thin Silicon on Insulator(ETSOI). As a key member, he has participated in and accomplished 3 research projects (or sub-projects) of National Science and Technology Major Project. 

EDUCATION

B. S. Physics, 1999, Shandong University

M. S.Microelectronics and Solid-state Electronics, 2002, Shandong University

Ph.D.Microelectronics and Solid-state Electronics, 2011, Shanghai Institute of Microsystem and Information Technology

work EXPERIENCE

Research Associate, Shanghai Institute of Microsystem and Information Technology,  Jan. 2014-the present

Research Assistant, Shanghai Institute of Microsystem and Information Technology, July, 2011-Dec., 2013

R&D Engineer, Integrated Electronic Systems Lab Co., Ltd., July, 2002 - March, 2008

SELECTED PUBLICATIONS

1. Zhongying Xue(#)(*)Da ChenPengfei JiaXing WeiZengfeng DiMiao Zhang(*)The reduction of critical H implantation dose for ion cut by incorporating B-doped SiGe/Si superlattice into Si substrateApplied Surface Science201638542~46

2. Ziwen Wang(#)Zhongying Xue(*)Gang WangJiayun DaiXiaohu ZhengJun MaYonghua LiMiao ZhangCatalyst-free approach for growth of graphene sheets on high-density silica nanowires by CVDMaterials Letters2016162165~168

3. Zhiqiang Mu(#)Miao ZhangZhongying XueGaodi SunQinglei GuoDa ChenGaoshan HuangYongfeng MeiPaul K. ChuZengfeng Di(*)Xi WangManipulation of strain state in silicon nanoribbons by top-down approachApplied Physics Letters201510617):174102

4. Qinglie Guo(#)Miao ZhangZhongying XueGang WangDa ChenR. CaoGaoshan HuangYongfeng Mei(*)Zengfeng Di(*)Xi WangDeterministic Assembly of Flexible Si/Ge Nanoribbons via Edge-Cutting Transfer and Printing for van der Waals HeterojunctionsSmall2015114140~4148

5. Da Chen(#)Zhongying XueXing WeiGang WangLin YeMiao ZhangDewang WangSu Liu(*)Ultralow temperature ramping rate of LT to HT for the growth of highquality Ge epilayer on Si (100) by 6 6. Zhongying Xue(#)Zengfeng DiLin YeZhiqiang MuDa ChenXing WeiMiao Zhang(*)Xi WangStudy of Ge loss during Ge condensation processThin Solid Films2014557120~124

HONORS AND AWARDED RESEARCH FUNDS

2012-2015. Shanghai Natural Science Foundation of China