Dawei Bi received his B.S. degree from the University of Science and Technology of China in 2005, and Ph.D. degree from Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS) in 2010. Since 2010, he worked at SIMIT as a Research Assistant and an Associate Professor. He is currently mainly engaged in the research on the specialty SOI technology development and applications in space environment. As a project manager, he is responsible for the National Natural Science Foundation project, the sub-topics of the Defense 973 project, and the open project of Microsatellite Lab.
B.S., Physics, 2005, University of Science and Technology of China
Ph.D., Microelectronics, 2010, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Research Assistant, SIMIT CAS, 2010-2014
Associate Professor, SIMIT CAS, 2015-the present
1. Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer, Nuclear Instruments and Methods in Physics Research B, 2012;
2. Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs, IEEE，Transactions on Nuclear Science, 2013;
3. Improving Total Dose Tolerance of Buried Oxides in SOI wafers by Multiple-step Si+ Implantation, IEEE，Transactions on Nuclear Science, 2014;
4. Investigation of the total dose response of partially depleted SOI MOSFET using TCAD, Microelectronics Journal, 2014;
5. Radiation Response of Pseudo-MOS Transistors Fabricated in Hardened Fully-depleted SIMOX SOI Wafers, Chinese Physics C, 2009;
National Natural Science Foundation project
Sub-topics of the Defense 973 project
Open project of Shanghai Microsatellite Lab
