Likun Ai, male. born in March 1977 in Hegang, Heilongjiang Province. He received a the B.S. degree and an M.S. degree from Changchun University of Science and Technology in June 2000 and March 2003, respective, and his Ph.D. degree from Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS) in June 2008. From April 2004 to December 2010, He worked at SIMIT as a research assistant. From January 2011 to the present, he worked at the State Key laboratory of functional materials for informatics of SIMIT as an associate professor. In 2012, He did some researches on the terahertz three terminal electronic materials and devices in Chalmers University of Technology in Sweden as a visiting scholar. His current researches mainly focus on the compound semiconductor microstructural materials and devices. He has led and participated in the National Natural Science Foundation project, the National Basic Research project, as well as the Pre-research project of CAS. He has been authored or co-authored over 40 technical papers which were published in journals and conferences, has 7 granted patents and pending patents.
B.S. degree, 2000, Changchun Institute of Optics and Fine Mechanics
M.S. degree, 2003, Changchun University of Science and Technology
PhD. Degree, 2008, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS)
From April 2004 to December 2010, He worked at SIMIT as a research assistant. From January 2011 to the present, he worked at the State Key laboratory of functional materials for informatics of SIMIT as an associate professor.
1. Ai Likun, Xu Anhuai, Sun Hao, Zhu Fuying and Qi Ming, InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE, Rare Metals, 2006, 25 (z2): 20-23
2. Likun Ai, Anhuai Xu,TengTeng, JiebinNiu, Hao Sun, and Ming Qi,Compound semiconductor nanotubes materials grown and fabricated, Nanoscale Research Letters，2011, 6:627
3. Likun Ai, Shuxing Zhou, Ming Qi, Anhuai Xu, Shumin Wang，InGaAsBi materials grown by gas source molecular beam epitaxyJournal of Crystal Growth, In Press, Available online 10 March 2017
4. Likun Ai, Anhuai Xu, ShuxingZhou, Ming Qi，GSMBE Growth of InGaAsPStep-Graded Composite Collector Structure Applied to DHBT，2015 International Conference on Optoelectronics and Microelectronics，July 16-18 , 2015，Changchun，P.R.China， IEEE，2015：330333
Study on terahertz three terminal electronic devices, National Key Basic Research Special Foundation of China (973). (No. 2010CB327502)
Fundamental research on the terahertz HEMT devices, National Natural Science Foundation of China (No. 61434006).
Study on the 3mm epitaxial materials based on InP, project of CAS
