Yi Gu received his bachelor’s degree from the department of intensive instruction of fundamental sciences of Nanjing University in 2004, and received his Ph. D degree in microelectronics and solid-state electronics from Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS) in 2009. From 2009, he has workd at SIMIT as an assistant researcher and then as an associate researcher. In 2012 and 2015, he visited Chalmers University of Technology in Sweden and University of Sheffield in UK as a visiting scholar, respectively. He has been involved in several projects of the Ministry of Science and Technology, Natural Science Foundation, CAS and Shanghai. His main research interests focus on the compound semiconductor materials and devices, including molecular beam epitaxy of semiconductors, short-wave infrared semiconductor detector materials and devices, near- and mid- infrared semiconductor lasers. He has co-authored one book, four book chapters, more than 90 papers in peer-reviewed journals, and obtained 20 granted national patents. He was elected a member of the Youth Innovation Promotion Association CAS in 2013, IEEE senior member in 2015, and Shanghai Rising-Star in 2017. In 2012 and 2015, he was granted the 2nd prize of Science and Technology Progress Award and 3rd prize of Technical Innovation Award in Shanghai, respectively.
B.S., Physics, 2004, Nanjing University
Ph. D., Microelectronics and solid-state electronics, 2009, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Associate Researcher, SIMIT, CAS, 2012-the present
Visiting Scholar, University of Sheffield, UK, 2015
Visiting Scholar, Chalmers University of Technology, Sweden, 2012
Assistant Researcher, SIMIT, CAS, 2009-2011
1. Y. Gu, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, B. Du, W. Y. Ji, and Y. H. Shi, “Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission”, Appl. Phys. Lett. 109, 122102 (2016).
2. Y. Gu, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, B. Du, Hsby. Li, “Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP”, Appl. Phys. Lett., 108, 032102 (2016).
3. Y. Gu, L. Zhou, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, and Hsby. Li, “Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAssuperlattice electron barrier”, Appl. Phys. Express, 8, 022202 (2015).
4. Y. Gu, Y. G. Zhang, X. Y. Chen, Y. Y. Cao, L. Zhou, S. P. Xi, A. Z. Li, Hsby. Li, “Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm”, J.Cryst. Growth, 425, 376-380 (2015).
5. Y. Gu, Y. G. Zhang, X. Y. Chen, S. P. Xi, B. Du, Y. J. Ma, “Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells” Appl. Phys. Lett., 107, 212104 (2015).
6. Y. Gu, Y. G. Zhang, Y. J. Ma, L. Zhou, X. Y. Chen, S. P. Xi, and B. Du, “InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer”, Appl. Phys. Lett. 106, 121102 (2015).
7. Y. Gu, Y. G. Zhang, Y. Y. Cao, L. Zhou, X. Y. Chen, Hsby. Li, S. P. Xi, “2.4-µm InP-based antimony-free triangular quantum well lasers in continuous-wave operation above room temperature”, Appl. Phys. Express 7, 032701 (2014).
8. Y. Gu, K. Wang, H. F. Zhou, Y. Y. Li, C. F. Cao, L. Y. Zhang, Y. G. Zhang, Q. Gong, S. M. Wang, “Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy”, Nanoscale Res. Lett., 9, 24 (2014).
9. Y. Gu, X. Y. Chen, Y. G. Zhang, Y. Y. Cao, X. Fang, Hsby. Li, “Type-I mid-infrared InAs/InGaAs quantum well lasers on InP-based metamorphic InAlAs buffers”, J. Phys. D: Appl. Phys. 46, 505103 (2013).
10. Y. Gu, Y. G. Zhang, X. Y. Chen, Y. Y. Cao, X. Fang, G. Q. Ding, L. Zhou, “InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm”, Appl. Phys. Lett., 102, 121110 (2013).
2017 Shanghai Rising-Star
2015the third class Technical Innovation Award in Shanghai
2015 senior member of IEEE
2014 Youth Post Expert inChangning District
2012 the second class Science and Technology Progress Award in Shanghai
2013 Youth Innovation Promotion Association, CAS
