Research Associate

Yaoyao Li

Title: Associate Researcher
Subject: Semiconductor Optoelectronic Devices
Phone: +86-021-62511070
Fax: +86-021-62524192
Email: yyli@mail.sim.ac.cn
Address: 865 Changning Road, Shanghai,China, 200050

RESUME

Yaoyao Li received a BSc from Department of Physics, Qufu Normal University in 2003, and his Ph.D. from Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2009. He has been working at Shanghai Institute of Microsystem and Information Technology since 2009 and was promoted to Associate Researcher in 2012. Dr. Yaoyao Li is mainly engaged in III-V semiconductor optoelectronic device process. His current research interests include semiconductor lasers and detectors, dilute bismide devices, and integration of light emitting materials on Si. He has published over 30 papers on international journals and conferences and held 10 granted Chinese patents.

EDUCATIOn

B.Sc  Physics, 2003,Qufu Normal University, China

Ph.D Microelectronics and Solid Electronics, 2009, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

work EXPERIENCE

Associate Researcher, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 2012-the present

Assistant Researcher, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 2009-2012

Visiting Scholar, Chalmers University of Technology, Swede, 2012

HONORS 

Shanghai Science and Technology Progress Prize (2nd Class)

SELECTED PUBLICATIONS

1. Yuxin Song, Hao Xu, Yaoyao Li*, Mahdad Sadeghi, Shumin Wang*, Natural patterning of templates on GaAs by formation of cracks, AIP Advances, 2015, 5, 067146.

2. S. M. Wang, Q. Gong, Y. Y. Li, C. F. Cao, H. F. Zhou, J. Y. Yan, Q. B. Liu, L. Y. Zhang, G. Q. Ding, Z. F. Di & X. M. Xie, A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst, Scientific Reports, 2014, 4.

3. Y. Y. Li, A. Z. Li, Y. Gu, Y. G. Zhang, H. S. B. Y. Li, K. Wang, X. Fang, The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 um, Journal of Crystal Growth, 2013, 378, 587-590.

4. Y.G. Zhang, Y. Gu, Y.Y. Li, A.Z. Li, C. Li, Y.Y. Cao, L. Zhou, An effective TDLS setup using homemade driving modules for evaluation of pulsed QCL, Appl. Phys. B., 2012, 109.

5. LI Yao-Yao, LI Ai-Zhen, WEI Lin, LI Hua, XU Gang-Yi, ZHANG Yong-Gang, High-Temperature Operation of 8.5 μm Distributed Feedback Quantum Cascade Lasers, CHIN. PHYS. LETT., 2009, 26.