Wenjie Yu, Researcher of Shanghai Institute of Microsystem an Information Technology (SIMIT). He graduated from the department of materials science of Fudan university (2005, Bachelor) and Chinese academy of science (2011, Ph.D). From September, 2009 to June, 2011, He was a joint PhD student in Peter Griinberg Institute 9 (PGl9-lT), Forschungszentrum Juelich. During June, 2011 to September, 2009, He served as a visiting researcher in PGl9-lT, Forschungszentrum Juelich. After that, He worked in SIMIT, Chinese Academy of Science as an assistant researcher. He became associate researcher in 2014 and promoted as researcher in 2018. Currently, he leads a research group working on the advanced SOI materials and devices, materials genome Initiative for integrated circuits. Dr. Wenjie Yu has published more than 100 journal papers and applied more than 40 patents on SOI materials and devices, including 15 patents have been granted.
EDUCATION
2009-2011 Joint Ph.D. of PGl9-lT, Forschungszentrum Juelich, Germany.
2005-2011 Ph.D. of Chinese Academy of Sciences, China.
2001-2005 Bachelor degree in Material Science, Fudan University of Technology, Shanghai, China.
RESEARCH EXPERIENCE
2018-Present, Researcher, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China.
2014-2018, Associate Researcher, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China.
2011-2011, Visiting researcher, PGl9-lT, Forschungszentrum Juelich, Germany.
2011-2014, Assistant Researcher, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China.
HONORS AND AWARDED RESEARCH FUNDS
"Youth Innovation Promotion Association CAS Program”, Fund 400 thousand Yuan (2014)
SELECTED PUBLICATIONS
1. Wenjie Yu, Wangran Wu, Member, Bo Zhang, Chang Liu, Jiabao Sun, Dongyuan Zhai, Yuehui Yu, Xi Wang, Yi Shi, Yi Zhao, and Qing-Tai Zhao, Experimental Investigation on Alloy Scattering in sSi/Si0.5Ge0.5/sSOI Quantum-Well p-MOSFET, IEEE Transactions on Electron Devices, VOL. 61, NO.4, APRIL 2014.
2. Yu, W., Zhang, B., Zhao, Q. T., Buca, D., Hartmann, J. M., Lupták, R., ... & Mantl, S. Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI. IEEE Electron Device Letters, 33(6), 758-760(2012).
3. Xinke Liu, Jing Wu, Wenjie Yu(Co-first author) , Le Chen, Zhonghui Huang, He Jiang, Jiazhu He, Qiang Liu, Youming Lu, Deliang Zhu, Wenjun Liu, Peijiang Cao, Shun Han, Xinbo Xiong, Wangying Xu, Jin-Ping Ao, Kah-Wee Ang, and Zhubing He, Monolayer WxMo1？x S2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors, Advanced Functional Materials, VOL.27, NO.13, JANUARY 2017.
4. Xinke Liu, Kah-Wee Ang, Wenjie Yu (Co-first author) , Jiazhu He, Xuewei Feng, Qiang Liu, He Jiang, Dan Tang, Jiao Wen, Youming Lu, Wenjun Liu, Peijiang Cao, Shun Han, Jing Wu, Wenjun Liu, Xi Wang, Deliang Zhu, and Zhubing He, Black phosphorus based field effect transistors with simultaneously achieved near ideal subthreshold swing and high hole mobility at room temperature, Scientific reports, VOL.6, (2016) 24920.8.
5. Wenjie Yu, Bo Zhang, Chang Liu, Zhongying Xue, Ming Chen, and Qingtai Zhao, Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO3 Gate Dielectric, Chinese Physics Letters, VOL.31, NO.1, (2014) 016101.
6. Wenjie Yu, Bo Zhang, Chang Liu, Yi Zhao, Wangran Wu, Zhongying Xue, Meng Chen, D. Buca, J.-M. Hartmann, Xi Wang, Qingtai Zhao, and S.Mantl, Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s) SOI quantum-well p-MOSFETs, Microelectronic Engineering, VOL.113, Pages 5-9, JANUARY 2014.
7. Xinke Liu, Youming Lu, Wenjie Yu*, Jing Wu, Jiazhu He, Dan Tang, Zhihong Liu, Pannirselvam Somasuntharam, Deliang Zhu, Wenjun Liu, Peijiang Cao, Sun Han, Shaojun Chen, and Leng Seow Tan, AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P (VDF-TrFE) ferroelectric polymer gating, Scientific reports, VOL.5, (2015)14092.
8. Xinke Liu, Jiazhu He, Dan Tang, Qiang Liu, Jiao Wen, Wenjie Yu*, Youming Lu, Deliang Zhu, Wenjun Liu, Peijiang Cao, Sun Han, Jisheng Pan, Wenjun Liu, Kah Wee Ang, and Zhubing He, Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy, Journal of Alloys and Compounds, VOL.650, 502-507 (2015).
9. Xinke Liu, Jiazhu He, Qiang Liu, Dan Tang, Fang Jia, Jiao Wen, Youming Lu, Wenjie Yu*, Deliang Zhu, Wenjun Liu, Peijiang Cao, Sun Han, Jisheng Pan, Zhubing He, and Kah-Wee Ang, Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: Effect of CHF3 treatment, Applied Physics Letters, VOL.107, NO.10, (2015)101601.
10. Jiao Wen, Qiang Liu, Chang Liu, Yize Wang, Bo Zhang, Zhongying Xue, Zengfeng Di, Jiahua Min, Wenjie Yu*, Xinke Liu, Xi Wang, and Qing-Tai Zhao, Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity, Microelectronic Engineering, VOL.163, 115-118(2016).
