Prof. Yuehui Yu, a semiconductor scientist, was born in Shanghai. In December 2017, he was appointed as the Secretary of the Party Committee of Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS). He received his M.Sc. and Ph.D. degrees in semiconductor physics and device physics at SIMIT and started his research from 1989. From 1990 to 1992, he worked as a visiting professor in Germany, and from 1996 to 1997 in Hong Kong as well. From 2002 to 2005, he worked as the deputy general manager of Shanghai Simgui Technology Co., Ltd. Since 2010, Prof. YU has worked as the Deputy Party Secretary and Secretary of the Commission for Discipline Inspection of SIMIT. In 2015, he became the Deputy Party Secretary, deputy director and Secretary of the Commission for Discipline Inspection of SIMIT.
EDUCATION
M.S. and Ph. D, semiconductor physics and device physics, 1985-1989, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences.
B.S., Electronic Engineering, 1981-1985, Jilin University.
RESEARCH EXPERIENCE
Aug., 1992–Present Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai
Professor
Research on semiconductor materials and devices
In charge of the personnel department and the graduate department;
Jul., 1990–Jul., 1992 Institute of FhG integrated circuit technology in Germany
Post-doctor
Research on devices and integrated circuit;
Jul., 1989–Jun.,1990 Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai
Associate Professor
Research on semiconductor materials
SELECTED PUBLICATIONS
1. Qian Wang, Xinhong Cheng, Li Zheng, Lingyang Shen, Jingjie Li, Dongliang Zhang, Ru Qian and Yuehui Yu, PEALD Induced Interface Engineering of AlNO/AlGaN/GaN MIS Diode with Alternate Insertion of AlN in Al2O3, The 29th International Symposium on Power Semiconductor Devices and Ics, ISPSD 2017).
2. Lingyan Shen, Dongliang Zhang, Xinhong Cheng, Li Zheng, Dawei Xu, Qian Wang, Jingjie Li, Duo Cao, and Yuehui Yu, Negative Differential Resistance in the I-V Curves of Al2O3/AlGaN/GaN MIS Structures, RSC Advances, 6 (2016), 5671.
3. Zheng, L., Xinhong Cheng, Duo Cao, Qian Wang, Zhongjian Wang, Chao Xia, Lingyan Shen, Yuehui Yu and Dashen Shen, Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices, J. Mater. Chem. C 4(47) (2016), 11067-11073.
4. Li Zheng, Xinhong Cheng, Duo Cao, Qian Wang, Zhongjian Wang, Chao Xia, Lingyan Shen, Yuehui Yu and Dashen Shen, Direct growth of Sb2Te3 on graphene by atomic layer deposition, RSC Adv., 2015,5, 40007
5. Xia, C.; Cheng, X.; Wang, Z.; Cao, D.; Jia, T.; Yu, Y.; Shen, D., ON-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOS. IEEE Transaction on Electron Devices, 60 (3), （2013）1279;
6. Duo Cao, Xinhong Cheng, Tingting Jia, Dawei Xu, Zhongjian Wang, Chao Xia, and Yuehui Yu, Characterization of HfO2/La2O3 layered stacking deposited on Si substrate, J. Vac. Sci. Technol. B, 31, (2013) 01A113;
7. Cao Duo, Cheng Xinhong, Jia Tingting, Zheng Li, Xu Dawei, Wang Zhongjian, Xia Chao, Yu Yuehui, Shen Dashen. Total-dose radiation response of hflao films prepared by plasma enhanced atomic layer deposition. IEEE Transactions on Nuclear Science, 60(2013)1373;
8. Xinhong Cheng, Dapeng Xu, Qing-Qing Sun, Dawei He, Zhongjian Wang,Yuehui Yu, David Wei Zhang, Qingtai Zhao. Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP. Applied Physics Letters, 96, (2010)022904;
9. Xinhong Cheng, Li Wan, Zhaorui Song, Yuehui Yu, Wenwei Yang, Dashen Shen. Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer. Applied Physics Letters, 90(2007)152910;
10. Xinhong Cheng, Zhaorui Song, Yuehui Yu, et al. Characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron beam evaporation. Applied Physics Letters, 88(2006) 122906;
