Dr. Xing Wei was born in June 1981, received his B.S. &M.S. degree from Changchun University of Science and Technology in 2004 & 2007 and his Ph.D. degree from Shanghai Institute of Microsystem and Information Technology in 2010. He worked as Assistant Professor in the State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology from 2010-2012. From 2013, he became Associate Professor of Shanghai Institute of Microsystem and information technology. Currently, he works as Manager of R&D Department of Shanghai Simgui Technology Co., Ltd. He focuses on the research of silicon on insulator and its high volume manufacturing technologies. He published technical articles in the Journal of the Electrochemical Society, Applied Physics Express, Journal of Vacuum Science and Technology B and so on. Dr. WEI is in charge of the projects from the National Natural Science Foundation of China, the Shanghai Science and Technology Commission. He has published more than 30 peer-reviewed papers and held 2 US, 1 Germany, 1 France, 1 Netherlands, 1 Japan, 1 Korea and 30 China patents.
EDUCATION
B.S., Department of Optics Physics, 2004, Changchun University of Science and Technology
M.S., State Key Laboratory on High Power Semiconductor Lasers, 2007, Changchun University of Science and Technology
Ph.D., Microelectronics and Solid State Electronics, 2010, Shanghai Institute of Micro-system and Information Technology
RESEARCH EXPERIENCE
Professor, Shanghai Institute of Microsystem and information technology, 2019-Present
Associate Professor, Shanghai Institute of Microsystem and information technology, 2013-2018
Manager, R&D Department, Shanghai Simgui Technology Co., Ltd. 2015-the present
Engineer, R&D Department, Shanghai Simgui Technology Co., Ltd. 2007-2014
HONORS AND AWARDED
2010 President’s Award of Chinese Academy of Sciences
2012 Member of Youth Innovation Promotion Association, Chinese Academy of Sciences
2014 Lu Jiaxi Award for Young Scholars
2017 Program of Shanghai Academic/Technology Research Leader
SELECTED PUBLICATIONS
1. Xing Wei, Aimin Wu, Xiang Wang, Xianyuan Li, Fei Ye, Jie Chen, Meng Chen, Bo Zhang, Chenglu Lin, Miao Zhang, and Xi Wang. Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer. Journal of The Electrochemical Society, 2010(157): H81-H85
2. Xing Wei, Zhongying Xue, Aimin Wu, Gongbai Cao, Bo Zhang, Chenglu Lin, Miao Zhang, and Xi Wang. Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing. Applied Physics Express, 2011(4): 031301
3. Xing Wei, Ai Min Wu, Meng Chen, Jing Chen, Miao Zhang, Xi Wang, and Cheng Lu Lin. Fabrication of Thin-film Silicon on Insulator by Separation by Implanted Oxygen Layer Transfer. Journal of Vacuum Science and Technology B, 2008(26): L45-L47
4. Xing Wei, Aimin Wu, Xiang Wang, Xianyuan Li, Fei Ye, Jie Chen, Meng Chen, Bo Zhang, Chenglu Lin, Miao Zhang, and Xi Wang. Characterization and Analysis of Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer. Journal of Vacuum Science and Technology B, 2010(28): 163-168
5. Da Chen, Zhongying Xue, Gang Wang, Qinglei Guo, Linjie Liu, Miao Zhang, Su Liu, and Xing Wei*. Strain relaxation of Si0.75Ge0.25 in hydrogen-implanted Si0.75Ge0.25/B-doped Si0.70Ge0.30/Si heterostructure. Applied Physics Express, 2014(7): 061302
6. Da Chen, Miao Zhang, Zhongying Xue, Gang Wang, Qinglei Guo, Zhiqiang Mu, Gaodi Sun, Xing Wei*, and Su Liu. Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer. Applied Physics Express, 2014(7): 111301
7. Yongwei Chang, Zhongying Xue, Da Chen, Shi Cheng, Miao Zhang, Zengfeng Di, Xing Wei*, and Xi Wang. High quality extremely thin SOI (ETSOI) fabricated by facilitated ion-cut with H trapping effect. Journal of Vacuum Science and Technology B, 2016(34): 020601
8. Yongwei Chang, Shi Cheng, and Lihua Dai, Da Chen, Zhongying Xue, Yemin Dong, Xing Wei*, and Xi Wang.Fabrication of radiation hardened SOI with embedded Si nanocrystal by ion-cut technique. Journal of Vacuum Science & Technology B, 2017(35): 020603
