Associate professor Zhiyuan Hu received a B.S. degree from Wuhan University in 2007. He received his Ph.D. from Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS) in 2012. He worked as Assistant Professor in the State Key Laboratory of Functional Materials for Informatics, SIMIT from 2012-2019. From 2020, he became Associate Professor of SIMIT. He has published more than 50 peer-reviewed papers with more than 10 authorized China invention patents. His current researches focus on high reliability of SOI material, processes and integrated circuits.
EDUCATION
B.S., Electronics Science and Technology, 2007, Wuhan University
Ph.D., Microelectronics and Solid State Electronics, 2012, Shanghai Institute of Micro-system and Information Technology
RESEARCH EXPERIENCE
Associate Professor, Shanghai Institute of Microsystem and information technology, 2019-Present
Assistant Professor, Shanghai Institute of Microsystem and information technology, 2012-2019
Technology Development Engineer, R&D Department, Hua Hong Semiconductor Limited, 2008-2012(co-culture with Shanghai Institute of Microsystem and information technology)
SELECTED PUBLICATIONS
1. Zhiyuan Hu, et al., Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology, IEEE Transactions on Nuclear Science, 2011(58): 1347-1354
2. Zhiyuan Hu, et al., Simple Method for Extracting Effective Sheet Charge Density along STI Sidewalls Due to Radiation, IEEE Transactions on Nuclear Science, 2011(58): 1332-1337
3. Zhiyuan Hu, et al., Radiation Hardening by Applying Substrate Bias, IEEE Transactions on Nuclear Science, 2011(58): 1355-1360
4. Zhiyuan Hu, et al., Total Ionizing Dose Effects in Elementary Devices for 180-nm Flash Technologies, Microelectronics Reliability, 2011(51): 1295-1301
5. Zhiyuan Hu, et al., Impact of within-Wafer Process Variability on Radiation Response, Microelectronics Journal, 2011(42): 883-888
6. Zhiyuan Hu, et al., Radiation induced inter-device leakage degradation, Chinese Physics C, 2011(35):769-773
7. Zhiyuan Hu, et al., Impact of substrate bias on radiation-induced edge effects in MOSFETs, Chinese Physics B, 2011(20): 120702-1-6
8. Zhiyuan Hu, et al., The impact of channel length on total ionizing dose effect in deep submicron technologies, Acta Physica Sinica, 2012(61): 050702-1-5
