Kai Lyu, Ph.D, Associate Professor of Shanghai Institute of Microsystem and Information Technology (SIMIT). Dr. Kai Lyu received his B.S. degree from the Harbin Institute of Technology in 2010, and Ph.D. degree from Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS) in 2016. He worked at Hangzhou Dianzi University as a Lecture Since 2016 and an Research Fellow in National University of Singapore since 2017. Since December 2018, He joined in SIMIT, CAS as an Associate Professor. His researches focus on SOI technology, Microwave Electronics and EDA technology, especially extreme-environmental microelectronics and low power application. He has published more than 10 peer-reviewed papers and obtained more than 15 authorized China invention patents.
EDUCATION
B.S., Electronic Packaging Technology, Harbin Institute of Technology
Ph.D., Microelectronics, 2016, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
RESEARCH EXPERIENCE
Associate Professor, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 2018-Present
Research Fellow, National University of Singapore,2017-2018
Lecture, Hangzhou Dianzi University, 2016-2017
HONORS AND AWARDED RESEARCH FUNDS
2019-2022, Shanghai Sailing Program ,“Low power Device Modeling and Circuits Design method for Wireless Application of Internet of Things”
SELECTED PUBLICATIONS
1. Body Effects on the Tuning RF Performance of PD SOI Technology Using Four-Port Network，IEEE Electron Device Letters，2018
2. Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs, IEEE Electron Device Letters, 2014
3. Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs，Chinese Physics B, 2015
4. Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures, Chinse Physics B, 2016
5. Body Related Parasitic Parameters Extraction for PD-SOI MOSFETs Using Four-Port Network, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, San Francisco, 2018
6. Low frequency noise of MOSFETs in partially depleted SOI technology with multi-fingers, Microwave Symposium (MMS), 2015 IEEE 15th Mediterranean, 2016
