R. Wright, J. C. Cao, and C. Zhang, Enhanced Optical Conductivity of Bilayer Graphene Nanoribbons in the Terahertz Regime, Phys. Rev. Lett. 103, 207401 (2009).

X. G. Guo, Z. Y. Tan, J. C. Cao, and H. C. Liu, Many-body effects on terahertz quantum well detectors, Appl. Phys. Lett. 94, 201101 (2009).

R. Wright, X. G. Xu, J. C. Cao, and C. Zhang, Strong nonlinear optical response of graphene in the terahertz regime, Appl. Phys. Lett. 95, 072101 ( 2009).

L. X. You, X. F. Shen, Shaping the response pulse of superconducting nanowire single photon detection with a snubber, Appl. Phys. Lett. 95, 152514 (2009)

Shulin Zhang, Yongliang Wang, Huiwu Wang, Shiqing Jiang and Xiaoming Xie, Quantitative evaluation of signal intergrity for magnetocardiography, Phys. Med. Biol. 54, 4793 (2009)

X Y Yang, L X You, X Wang, L B Zhang, L Kang and P H Wu, Local anodic oxidation of superconducting NbN thin films by an atomic force microscope, Supercond. Sci. Technol 22, (2009) 125027

Wei Li , Peijun Yao , Xunya Jiang , C.T. Chan “Dynamical study of the necklace states” Photonics and Nanostructures – Fundamentals and Applications 128–136 (2009)

Huaping Lei , JunChen , XunyaJiang, Ge´ rardNouet “Microstructure analysis in strained-InGaN/GaN multiple quantum wells” Microelectronics Journal 40 (2009) 342–345

Jiong Yang,1 Xinhua Hu,2,3,* Xin Li,4 Zheng Liu,5 Zixian Liang,5 Xunya Jiang,5 and Jian Zi1,3

“Broadband absorption enhancement in anisotropic metamaterials by mirror reflections ” Phys.Rev. B 80, 125103 (2009)

H. Li, J. C. Cao, J. T. Lv, and Y. J. Han, Monte Carlo simulation of extraction barrier width effects on terahertz quantum cascade lasers, Appl. Phys. Lettt. 92, 221105 (2008).

H. Luo, S. R. Laframboise, Z. R. Wasilewski, G. C. Aers, H. C. Liu，and J. C. Cao, Terahertz quantum-cascade lasers based on three-well active module, Appl. Phys. Lett. 90, 041112 (2007).

Zhang, J. C. Cao, X. G. Guo, and Feng Liu, Impurity mediated absorption continuum in single-walled carbon nanotubes, Appl. Phys. Lett. 90, 023106 (2007).

Lei Chen, Zhongshui Ma, J. C. Cao, T. Y. Zhang, Chao Zhang, Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling, Appl. Phys. Lett. 91, 102115 (2007).

J. T. Lv and J. C. Cao, Coulomb scattering in the Monte Carlo simulation of terahertz quantum-cascade lasers, Appl. Phys. Lett. 89, 211115 (2006).

J. T. Lv and J. C. Cao, Monte Carlo simulation of hot phonon effects in resonant-phonon-assisted terahertz quantum-cascade lasers, Appl. Phys. Lett. 88, 061119 (2006).

H. C. Liu , M. Wächter, D. Ban, Z. R. Wasilewski, M. Buchanan, G. C. Aers, J. C. Cao, S. L. Feng, B. S. Williams, and Q. Hu, Effect of doping concentration on the performance of terahertz quantum-cascade lasers, Appl. Phys. Lett. 87, 141102 (2005).

H. C. Liu, C. Y. Song, A. J. SpringThorpe, and J. C. Cao, Terahertz quantum-well photodetector, Appl. Phys. Lett. 84, 4068 (2004).

J. C. Cao, A. Z. Li, X. L. Lei, and S. L. Feng, Current self-oscillation and driving-frequency dependence of negative-effective-mass diodes, Appl. Phys. Lett. 79, 3524 (2001).

J. C. Cao, X. L. Lei, A. Z. Li, and H. C. Liu, Spectrum dynamics of negative-effective-mass oscillators under a THz radiation, Appl. Phys. Lett. 78, 2524 ( 2001).

X. G. Guo and J. C. Cao, High-field electron transport of wide quantum wells under in-plane magnetic fields, J. Appl. Phys. 105, 113708 (2009).

Wang, J. C. Cao, and C. Zhang, Noise temperature spectrum of hot electrons in semiconductor superlattices, J. Appl. Phys. 105, 013717 (2009).

W. Feng and J. C. Cao, Nonlinear dynamics in GaAs1-xNx diodes under terahertz radiation, J. Appl. Phys. 106, 033708 (2009).

W. Feng and J. C. Cao, Theoretical study of terahertz current oscillation in GaAs1-xNx, J. Appl. Phys. 104, 013111 (2008).

H. Li, J. C. Cao, and J. T. Lv, Monte Carlo simulation of carrier transport and output characteristics of terahertz quantum cascade lasers, J. Appl. Phys. 103, 103113 (2008).

H. Li, J. C. Cao, Y. J. Han, X. G. Guo, Z. Y. Tan, J. T. Lü, H. Luo, S. R. Laframboise, and H. C. Liu, A study of terahertz quantum cascade lasers: Experiment versus simulation, J. Appl. Phys. 104, 043101 (2008).

H. Li, J. C. Cao, Z. Y. Tan, and S. L. Feng, Comparison of resonant-phonon-assisted terahertz quantum-cascade lasers with one-well injector and three-well module, J. Appl. Phys. 104, 103101 (2008).

L. Y. Yu, J. C. Cao, and C. Zhang, Optical absorption coefficients in two-dimensional semiconductors under strong magnetic field, J. Appl. Phys. 99, 123706 (2006).

X. G. Guo and J. C. Cao, Electro-optic interband excitonic absorption of nanoring double-quantum-wells, J. Appl. Phys. 100, 083112 (2006).

X. G. Guo and J. C. Cao, Interband absorption of multiple-quantum-well including diluted magnetic semiconductor in magnetic fields, J. Appl. Phys. 99, 013505 (2006).

X. W. Mi, J. C. Cao, C. Zhang, and F. B. Meng, Effects of Collective Excitations on the Quantum Well Intersubband Absorption, J. Appl. Phys. 98, 103530 (2005).

T. Y. Zhang, W. Zhao, J. C. Cao, and G. Qasim, Interband optical absorption spectra of a finite quantum dot superlattice in a cylindrical nanowire, J. Appl. Phys. 98, 094311 (2005).

J. T. Lv and J. C. Cao, Interface and confined optical phonon modes in wurtzite multi-interface heterostructures, J. Appl. Phys. 97, 033502 (2005).

T. Y. Zhang and J. C. Cao, Optical absorption in semiconductor nanorings under a lateral terahertz electric field, J. Appl. Phys. 97, 024307 (2005).

Y. H. Zhang, J. C. Cao, S. L. Feng, and H. C. Liu, Dynamical instability and switching property of resonant tunneling device under terahertz radiation, J. Appl. Phys. 98, 033718 (2005).

X. W. Mi, J. C. Cao, and C. Zhang, Optical absorption in terahertz- driven quantum wells, J. Appl. Phys. 95, 1191 (2004).

H. Wu, J. C. Cao, and G. Q. Xia, Simulation of semiconductor intersubband Raman laser, J. Appl. Phys. 94, 5710 (2003).

J. C. Cao, H. C. Liu, and X. L. Lei, Simulation of negative-effective-mass terahertz oscillators, J. Appl. Phys. 87, 2867 (2000).

J. C. Cao, Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures, Phys. Rev. Lett. 91, 237401 (2003).

H. C. Liu, C. Y. Song, Z. R. Wasilewski, A. J. SpringThorpe, J. C. Cao, C. Dharma-wardana, G. C. Aers, D. J. Lockwood, and J. A. Gupta, Coupled electron-phonon modes in optically pumped intersubband lasers, Phys. Rev. Lett. 90, 077402 (2003).

Xin Li, Zixian Liang, Xiaohan Liu, Xunya Jiang, and Jian Zi “All-angle zero reflection at metamaterial surfaces” Appl. Phys. Lett 93 171111 (2008)

Chuanhong Zhou Peijun Yao Xunya Jiang “Light-bullet in linear photonic crystals” Appl. Phys. Lett. 93, 61103 (2008)

Zhiyong Xu, B. Maes, Xunya Jiang, J. D. Joannopoulos, L. Torner, and M. Soljacic “Nonlinear photoic crystals near the supercollimation point” Optics Letters 33, 1762 (2008)

Deyin Zhao, Chuanhong Zhou, Qian Gong and Xunya Jiang “Lasing cavities and ultra-fast switch based on self-collimation of photonic crystal” J. Phys. D.41 11510 (2008)

Deyin Zhao, Chuanhong Zhou, Yongliang Zhang, Lina Shi and Xunya Jiang “Vertical cavity-surface emitting photonic crystal surface-mode lasers” Appl. Phys. B 91 475 (2008)

Zixian Liang, Peijun Yao, Xiaowei Sun, and Xunya Jiang “The physical picture and the essential elements of the dynamical process for dispersive cloaking structure” Appl. Phys. Lett. 93, 131118 (2008)

Deyin Zhao, Xunya Jiang “Vertical surface emitting open coupled-cavities based on photonic crystal surface modes” Appl. Op. 47, 1729 (2008)

Yongliang Zhang, Mingrui Zhang, Xunya Jiang “Gap soliton of surface plasmon polaritons in left-handed material” Physica E 40, 929 (2008)

Peijun Yao, Zixian Liang, Xunya Jiang, “The limitation of the electromagnetic cloak with dispersive material” Appl. Phys. Lett. 92, 031111 (2008)

Deyin Zhao, Jie Zhang, Peijun Yao, and Xunya Jianga “Photonic crystal Mach-Zehnder interferometer based on self-collimation ” Appl. Phys. Lett 90 231114 (2007)

Xunya Jianga_ and Chuanhong Zhou “The nonlinear effect from the interplay between the nonlinearity and the supercollimation of photonic crystal” Appl. Phys. Lett 91 031105 (2007)

Lina Shi , Xunya Jiang and Chengfang Li “Effects induced by Mie resonance in two-dimensional

photonic crystals ”  J. Phys.: Condens. Matter 19 (2007)

Yongliang Zhanga,_, Mingrui Zhanga,b, Xunya Jianga “Gap soliton of surface plasmon polaritons in left-handed material” Physica E 40 929–934 (2008)

Huaping Lei, Jun Chen, Gérard Nouet, Songling Feng, Qian Gong, and Xunya Jiang “Photonic band gap structures in the Thue-Morse lattice” Phys.Rev. B 75, 205109 (2007)

Huanyang Chen,1,2 Zixian Liang,3 Peijun Yao,3 Xunya Jiang,1,3 Hongru Ma,2 and C. T. Chan “Extending the bandwidth of electromagnetic cloaks” Phys.Rev. B 76, 241104 R(2007)

Yonggang Zhang†,Yi Gu, Zhaobing Tian, Aizhen Li, Xiangrong Zhu, Kei Wang，“Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination” Infrared Physics & Technology，52,（2009），52-56

Y. G. Zhang†, Y. Gu, Z. B. Tian, K. Wang, X. R. Zhu, A. Z. Li, Y. L. Zheng,“Performance of gas source MBE grown wavelength extended InGaAs photodetectors with different buffer structures”J. Crystal Growth，311，(2009), 1881-1884

Y. Gu, Y. G. Zhang†, K. Wang, A. Z. Li, Y. Y. Li，“AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4mm range” J. Crystal Growth，311，(2009)， 1935-1938

GU Yi, ZHANG Yong-Gang†, LI Ai-Zhen, WANG Kai, LI Cheng, LI Yao-yao, “Structural and photoluminescence properties of highly strain-compensated InAlAs/InGaAs superlattice” Chin. Phys. Lett., 26(7), (2009), 077808

Yonggang Zhang†, Yi Gu, Zhaobing Tian, Aizhen Li, Xiangrong Zhu, Yanlan　  Zheng, “Wavelength extended 2.4 um heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations” Infrared Physics & Technology, 51, 316, (2008)

GU Yi, ZHANG Yong-Gang† “Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy” Chin. Phys. Lett., 25(2), 726-729, (2008)

Yong-gang Zhang†, Yi Gu, Kai Wang, Ai-zhen Li, Cheng Li“Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on linear graded InAlAs buffer”Semicon. Sci. Technol. 23， 125029, (2008)

ZHANG Yong-Gang†, GU Yi,Zhang Xiao-jun, Li Ai-zhen, Tian Zhao-bing “Gas Sensor Using a Robust Approach under Time Multiplexing Scheme with a Twin Laser Chip for Absorption and Reference” Chin. Phys. Lett., 25(9), 3246-3249, (2008)

Tian Zhao-Bing，Gu Yi, Wang Kai, ZHANG Yong-Gang†, “Gas source MBE grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cou-off wavelength up to 2.7 um ” Chin. Phys. Lett., 25(6), 2292，(2008)

ZHANG Yong-Gang†, Tian Zhao-Bing, Zhang Xiao-Jun, Gu Yi, Li Ai-Zhen, Zhu　 Xiang-Rong “An Innovative Gas Sensor with on Chip Reference Using Monolithic Twin Laser ” Chin. Phys. Lett., 24(10), 2839, (2007)

ZHANG Yong-Gang†, Zhang Xiao-Jun, Zhu Xiang-Rong, Li Ai-Zhen, Liu Sheng “Tunable Diode Laser Absorption Spectroscopy Detection of N2O at 2.1 um Using Antimonide Laser and InGaAs Photodiode” Chin. Phys. Lett., 24(8), 2301, (2007)

GU Yi, ZHANG Yong-gang†, LIU Sheng “Strain Compensated AlInGaAs/ InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2um” Chin. Phys. Lett., 24(11), 3237, (2007)

Y.Gu, Y.G.Zhang†, A.Z.Li, H.Li “Optical properties of gas source MBE grown AlInP on GaAs” Mater. Sci. & Eng. B, 139, 246, (2007)

Yonggang Zhang†, Yi Gu, Cheng Zhu, Guoqiang Hao, Aizhen Li, Tiandong Liu “Gas source MBE grown wavelength extended 2.2 and 2.5 µm InGaAs PIN photodetectors” Infrared Physics & Technology, 47(3), 257, (2006)

ZHANG Yong-Gang†, XU Gang-Yi, LI Ai-Zhen, LI Yao-Yao, GU Yi, LIU Sheng, WEI Lin “Pulse Wavelength Scan of Room Temperature Mid-Infrared Distributed Feedback Quantum Cascade Lasers for N2O Gas Detection” Chin. Phys. Lett., 23(7), 1780, (2006)

ZHANG Yong-Gang† , Zheng Yan-lan, LIN Chun, LI Ai-Zhen, LIU Sheng “Continuous wave performance and tunability of MBE grown 2.1um InGaAsSb /AlGaAsSb MQW lasers” Chin. Phys. Lett., 23(8), 2262, (2006)

Yonggang Zhang†，Zhenxing Cheng，Aizhen Li，Songlin Feng，“Mid-infrared absorption spectra of dimethyl methylphosphonate as a molecular simulant of nerve agents” Chin. Opt. Lett., 4(10), 608, (2006)

Cheng Zhu, Yong-gang Zhang†, Ai-zhen Li and Zhao-bing Tia “Analysis of key parameters affecting the thermal behavior and performance of quantum cascade lasers” J. Appl. Phys., 100, 053105, (2006)

Y. Gu, Y.G. Zhang†, H. Li, A.Z. Li, C. Zhu, “Gas source MBE growth and doping characteristics of AlInP on GaAs” Mater. Sci. & Eng. B, 131, 49, (2006)

Y. G. Zhang†, Y. Gu, C. Zhu, A. Z. Li, and T. D. Liu, “AlInP–GaInP–GaAs UV-Enhanced Photovoltaic Detectors Grown by Gas Source MBE” IEEE Photon. Technol.  Lett., 17(6), 1265，(2005) [† Corresponding author]

ZHANG Yong-gang†, JIANG Xun-ya, ZHU Cheng, GU Yi, LI Ai-zhen, QI Ming，FENG Song-lin, “Growth and Characterization of GaAs/AlGaAs Thue-Morse Quasicrystal Photonic Bandgap Structures” Chin, Phys. Lett., 22(5)，1191, (2005)

ZHANG Yong-gang†, HAO Guo-qiang，HU Yi，ZHU Cheng，LI Ai-zhen，LIU Tian-dong “1.9um InGaAs PIN Photodetectors Grown by Gas Source MBE” Chin, Phys. Lett., 22(1), 250, (2005)

C Zhu, Y G Zhang†, A Z Li and Y L Zheng “Comparison of thermal characteristics of antimonide and phosphide MQW lasers” Semicond. Sci. & Technol. 20 , 563, (2005)

Zhu, Y.G.Zhang†, A.Z. Li, Y.L. Zheng, T. Ta [† Corresponding author]ng “Heat management of MBE-grown antimonide lasers” J. Crystal Growth 278, 173, (2005)

T. Hong, Y.G.Zhang†, T. D. Liu, and Y. L. Zheng “BCl3/Ar ICP Etching of GaSb and Related Materials for Quaternary Antimonide Laser Diodes” Journal of The Electrochemical Society, 152  G372 (2005)

Zhu Cheng, Zhang Yong-gang†, Li Ai-zhen，“Thermal conductivities of III-V antimonides” Semiconductor Photonics and Technology，10(3), 208, (2004)

HONG Ting, ZHANG Yong-gang†，LIU Tian-dong,“Reactive ion etching of GaAs, GaSb, InP and InAs in Cl2/Ar plasma” Semiconductor Photonics and Technology，10(3), 203, (2004)

CHU Cheng, ZHANG Yong-gang†, LI Ai-zhen，“Optimization of multi- layer AR coatings for GaInP/GaAs tandem solar cells” Semiconductor photonics and technology 10(1), 44，（2004）

Chaotong Lin, Guanghui Yu, Xinzhong Wang, Mingxia Cao, Hang Gong, Ming Qi, and Aizhen Li, “Improved GaN film overgrown with a molybdenum nanoisland mask”, Applied Physics Letters 93, 031906 (2008).

Chaotong Lin, Guanghui Yu, Xinzhong Wang, Mingxia Cao, Haifeng Lu, Hang Gong, Ming Qi, and Aizhen Li, “Catalyst-free growth of well vertically aligned GaN needlelike nanowires array with low-field electron emission properties”, Journal of Physical Chemistry C 112, 18821 (2008).

Chaotong Lin, Guanghui Yu, Xinzhong Wang, Mingxia Cao, Haifeng Lu, Hang Gong, Ming Qi and Aizhen Li, “Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template”, Materials Letters 63, 943 (2009).

Chaotong Lin, Guanghui Yu, Benliang Lei, Xinzhong Wang, Haohua Ye, Sheng Meng, Ming Qi, Aizhen Li, Gérard Nouet, Pierre Ruterana, Jun Chen, “Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy”, Rare Metals 25 (Suppl.2), 15 (2006).

Xinzhong Wang, Guanghui Yu, Chaotong Lin, Mingxia Cao, Hang Gong, Ming Qi, and Aizhen Li, “Thick GaN Grown on a Nanoporous GaN Template by Hydride Vapor Phase Epitaxy”, Electrochemical and Solid-State Letters 11, H273 (2008).

Xinzhong Wang, Guanghui Yu, Chaotong Lin, Mingxia Cao, Hang Gong, Ming Qi, and Aizhen Li, “High-quality thick GaN overgrown on an array of SiO2 nanomasks by HVPE”, Journal of The Electrochemical Society 155, H1000 (2008).

Xiaolong Wang, Guanghui Yu, Xinzhong Wang, Chaotong Lin, Benliang Lei, Ming Qi, Gérard Nouet, Pierre Ruterana, Jun Chen, “Research on fabrication and properties of nanoporous GaN epilayers”, Rare Metals 25 (Suppl. 2), 5 (2006).

Xinzhong Wang, Guanghui Yu, Benliang Lei, Chaotong Lin, Xiaolong Wang, Ming Qi, Aizhen Li, Gérard Nouet, Pierre Ruterana, Jun Chen, “Growth of high-quality thick GaN using a tungsten interlayer”, Rare Metals 25 (Suppl. 2), 11 (2006).

Xiaolong Wang, Guanghui Yu, Benliang Lei, Xinzhong Wang, Chaotong Lin, Yanpin Sui, Sheng Meng, Ming Qi, Aizhen Li, “Recovery of Dry Etching–Induced Damage in n-GaN by Nitrogen Plasma Treatment at Growth Temperature”, Journal of Electronic materials 36, 6 (2007).

Benliang Lei, Guanghui Yu, Haohua Ye, Sheng Meng, Xinzhong Wang, Chaotong Lin, Ming Qi, Aizhen Li, Gérard Nouet , Pierre Ruterana, Jun Chen, “Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation”, Thin Solid Films 516, 3772 (2008).

Anhuai Xu, Ming Qi, Fuying Zhu, Hao Sun, Likun Ai, Heavily Carbon-Doped p-Type InGaAs Grown by Gas Source Molecular Beam Epitaxy for Application toHeterojunction Bipolar Transistors, J. Crystal Growth, 301-302, pp212-216(2007).

Anhuai Xu, LiKun Ai, Hao Sun and Ming Qi, InP/InGaAs/InP DHBT structures with N⁺ Doping Composite Collector Grown by Gas Source Molecular Beam Epitaxy, Journal of Ceramic Processing Research.Vol.7, No. 2, pp.177~179 (2006).

Xiaojie Chen, Anhuai Xu*, LiKun Ai and Ming Qi,InGaAs/InP heterostructural materials for opto-electronic integrated circuit receiver application grown by gas source molecular beam epitaxy,Journal of the Korean Physical Society, 46, S229 (2005).

Ai Likun, Xu Anhuai, Sun Hao, Zhu Fuying, Qi Ming, InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE, Rare Metals, 2006, Vol.25 (spec): P20-23.