Non-volatile phase-change random-access memory (PCRAM) is regarded as a leading candidate for next-generation electronic memory hierarchy. It utilizes the pronounced electrical resistance difference between the amorphous and crystalline states of chalcogenide phase change materials (PCMs) to encode digital information. Fast and reversible phase transitions between the two states at elevated temperatures and good thermal stability at room temperature mak...

Recently, Phase Change Random Access Memory (PCRAM) research group of the Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS) made an important progress in 3-D memory integrated circuit (IC) design. The research work has been published electronically on IEEE Transactions on Circuits and Systems II: Express Briefs [vol. PP, no. 99, 2017], which is an important journal in IC design, with the title of “...

June - - The opening ceremony of the 19th China Association for Science and Technology ( CAST ) sponsored by CAST and the People ' s Government of Jilin province was held in Changchun . Member of the political bureau of the CPC central committee .Chairman of the China association for science and technology WAN Gang attended the opening ceremony as well and delivered a speech .In the past 19 years since its inauguration , the rewards has been wholly comm...

Shanghai , 28th , June - - A breakthrough in the industrialization of phase change random access memory ( PCRAM ) has been realized by Prof . SONG Zhitang ' s group .Which was announced in a press conference held in Shanghai Institute of Microsystem and Information Technology ( SIMIT ) , Chinese Academy of Sciences ( CAS ) .During the conference , WANG Dongjie , the general manager of Zhuhai Apex Microelectronics Co . , Ltd , and Prof . SONG Zhitang gav...