XU Yuansen

Chinese Academy of Sciences,Metallurgy and Microelectronics,Scientist

XU Yuansen was born in July 1931 in Taicang, Jiangsu In 1952. He graduated from the Department of metallurgical engineering, Tangshan Jiaotong University. In 1954, he pursued studies in the Soviet Union and received his Ph.D. from the former Soviet Union Moscow Institute of Nonferrous Metals in 1958. After returning to China, he worded at Shanghai Metallurgical Institute (current Shanghai Microsystems), and served as the director of the ion beam open laboratory. 

He had also served as an international committee member of two international academic conferences on ion implantation and material modification. He was appointed as an alternate professor of the Institute of Solid State Technology in Munich, Germany. He was elected as an alternate member of the 5th Committee of the Shanghai Municipal Committee in 1986 and a member of the Chinese Academy of Sciences in 1991. In 1992 he was elected as an alternate member of the 14th Central Committee of the Communist Party of China. He is currently the researcher of Shanghai Microsystem, supervisor of doctoral tutor in Shanghai, chairman of Shanghai IC Industry Association, and vice chairman of Shanghai Huahong NEC Electronics Co., Ltd. 

In the 60s, XU Yuansen was responsible for the national defense key task of separation membrane (code-named vacuum valve) processing work, as the second inventor for the successful development of separation. After the 1970s, he conducted researches on the modification, synthesis, processing and analysis of ion beam materials. The enhanced annealing effect of ion implantation damage was induced by the irradiation of carbon dioxide laser, and the whole ion implantation technique was developed in China. The first 120-gate gallium arsenide gate array circuit was processed by reactive ion beam into the first batch of flash holographic grating in China. He also studied SOI materials, developed CMOS/SOI circuit and ion beam enhanced deposition technology, and synthesized silicon nitride and titanium nitride film. 

Zou Shichang won the first prize of National Invention Award, the Natural Scientific and Technological Progress Award of Chinese Academy of Sciences and 14 other awards. He has published more than 200 papers, trained more than 30 doctoral students, and was awarded the Outstanding Talent for the Development and Construction of Pudong, Shanghai. In 2008, he was awarded the China Semiconductor Industry Development Award by the Semiconductor Equipment and Materials International (SEMI).